BC860AMTF datasheet, PDF - EEWORLD Datasheet

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BC860AMTF: Description100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size98KB，5 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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BC860AMTF Overview

100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC860AMTF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	SOT-23
package instruction	SOT-23, 3 PIN
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	110
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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BC856- BC860 PNP Epitaxial Silicon Transistor

August 2006

BC856- BC860

PNP Epitaxial Silicon Transistor

Features

• Switching and Amplifier Applications

• Suitable for automatic insertion in thick and thin-film circuits

• Low Noise: BC859, BC860

• Complement to BC846 ... BC850

SOT-23

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings*

Symbol

CBO

Collector-Base Voltage

= 25°C unless otherwise noted

Parameter

: BC856

: BC857/860

: BC858/859

Value

-80

-50

-30

-65

-45

-30

-5

-100

310

150

-65 ~ 150

Units

°C

CEO

Collector-Emitter Voltage

: BC856

: BC857/860

: BC858/859

EBO

STG

Emitter-Base Voltage

Collector Current (DC)

Collector Power Dissipation

Junction Temperature

Storage Temperature

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics*

=25°C unless otherwise noted

Symbol

CBO

(sat)

(on)

Parameter

Collector Cut-off Current

DC Current Gain

Test Condition

= -30V, I

= -5V, I

= -2mA

Min.

110

Typ.

Max.

-15

800

Units

Collector-Emitter Saturation Voltage I

= -10mA, I

= -0.5mA

= -100mA, I

= -5mA

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

Noise Figure

: BC856/857/858

: BC859/860

: BC859

: BC860

= -10mA, I

= -0.5mA

= -100mA, I

= -5mA

= -5V, I

= -2mA

= -5V, I

= -10mA

= -5V, I

= -10mA

f=100MHz

= -10V, I

=0, f=1MHz

= -5V, I

= -200µA

=2KΩ, f=1KHz

= -5V, I

= -200µA

=2KΩ, f=30~15000Hz

-600

-90

-250

-700

-900

-660

150

-300

-650

-750

-800

MHz

1.2

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

www.fairchildsemi.com

BC856- BC860 Rev. B

BC860AMTF Related Products

	BC860AMTF	BC857AMTF	BC858CMTF	BC860CMTF
Description	100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified?	conform to	conform to	conform to	conform to
Parts packaging code	SOT-23	SOT-23	SOT-23	SOT-23
package instruction	SOT-23, 3 PIN	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SOT-23, 3 PIN
Contacts	3	3	3	3
Reach Compliance Code	unknow	compli	compliant	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	45 V	45 V	30 V	45 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	110	110	420	420
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W	0.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz
Base Number Matches	1	1	1	1
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	NOT SPECIFIED	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-

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