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Datasheet> All Categories > Discrete semiconductor> The transistor> BC858CMTF
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BC858CMTF

Description
100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size98KB，5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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BC858CMTF Overview

100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC858CMTF Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging code3LD, SOT23, JEDEC TO-236, LOW PROFILE
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1

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BC856- BC860 PNP Epitaxial Silicon Transistor
August 2006
BC856- BC860
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
2
1
3
tm
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
Symbol
V
CBO
Collector-Base Voltage
T
a
= 25°C unless otherwise noted
Parameter
: BC856
: BC857/860
: BC858/859
Value
-80
-50
-30
-65
-45
-30
-5
-100
310
150
-65 ~ 150
Units
V
V
V
V
V
V
V
mA
mW
°C
°C
V
CEO
Collector-Emitter Voltage
: BC856
: BC857/860
: BC858/859
V
EBO
I
C
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
T
a
=25°C unless otherwise noted
Symbol
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
NF
Parameter
Collector Cut-off Current
DC Current Gain
Test Condition
V
CB
= -30V, I
E
=0
V
CE
= -5V, I
C
= -2mA
Min.
110
Typ.
Max.
-15
800
Units
nA
Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
: BC856/857/858
: BC859/860
: BC859
: BC860
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA
f=100MHz
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -5V, I
C
= -200µA
R
G
=2KΩ, f=1KHz
V
CE
= -5V, I
C
= -200µA
R
G
=2KΩ, f=30~15000Hz
-600
-90
-250
-700
-900
-660
150
-300
-650
mV
mV
mV
mV
-750
-800
mV
mV
MHz
6
2
1
1.2
1.2
10
4
4
2
pF
dB
dB
dB
dB
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BC856- BC860 Rev. B

BC858CMTF Related Products

BC858CMTF BC860AMTF BC857AMTF BC860CMTF
Description 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? conform to conform to conform to conform to
Parts packaging code SOT-23 SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SOT-23, 3 PIN SMALL OUTLINE, R-PDSO-G3 SOT-23, 3 PIN
Contacts 3 3 3 3
Reach Compliance Code compliant unknow compli unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 420 110 110 420
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz
Base Number Matches 1 1 1 1
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 NOT SPECIFIED -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -

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