Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1658
DESCRIPTION
·With
TO-220F package
·Complement
to type 2SC4369
·Good
linearity of h
FE
APPLICATIONS
·For
general purpose applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-30
-30
-5
-3
-0.3
15
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
j
T
stg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1658
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA ; I
B
=0
B
-30
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-2A ;I
B
=-0.2A
B
-0.3
-0.8
V
V
BE
Base-emitter on voltage
I
C
=-0.5A ; V
CE
=-2V
-0.75
-1.0
V
I
CBO
Collector cut-off current
V
CB
=-20V; I
E
=0
-1.0
μA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-1.0
μA
h
FE-1
DC current gain
I
C
=-0.5A ; V
CE
=-2V
70
240
h
FE-2
DC current gain
I
C
=-2.5A ; V
CE
=-2V
25
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
40
pF
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-2V
100
MHz
h
FE-1
Classifications
O
70-140
Y
120-240
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1658
Fig.2 Outline dimensions
3
京公网安备 11010802033920号
EEWORLD
