EEWORLDEEWORLDEEWORLD

Part Number

Search

LDTC113ZLT3G

Description
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size272KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric Compare View All

LDTC113ZLT3G Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,

LDTC113ZLT3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)33
Number of components1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Transistor component materialsSILICON

LDTC113ZLT3G Preview

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
3
LDTC113ZLT1G
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
1
2
SOT-23
Absolute maximum ratings
(Ta=25°C)
Parameter
Symbol
V
CC
V
IN
I
O
I
C(Max.)
P
D
Tj
Tstg
Limits
LDTC113ZWT1G
Unit
V
V
mA
mW
°C
°C
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
50
−5
to
+10
100
100
200
150
−55
to
+150
DEVICE MARKING AND RESISTOR VALUES
Device
LDTC113ZLT1G
LDTC113ZLT3G
Marking
BC
BC
R1 (K)
1
1
R2 (K)
10
10
Shipping
3000/Tape & Reel
10000/Tape & Reel
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
Min.
3
33
0.7
8
Typ.
0.1
1
10
250
Max.
0.3
0.3
7.2
0.5
1.3
12
V
V
mA
µA
kΩ
MHz
Unit
Conditions
V
CC
=5V, I
O
=100µA
V
O
=0.3V, I
O
=20mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V, V
I
=0V
V
O
=5V, I
O
=5mA
V
CE
=10V, I
E
=
−5mA,
f=100MHz
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
1/3
LESHAN RADIO COMPANY, LTD.
LDTC113ZLT1G
Electrical characteristic curves
100
50
INPUT VOLTAGE : V
I (on)
(V)
V
O
=0.3V
OUTPUT CURRENT : Io
(A)
10m
5m
2m
1m
500µ
200µ
100µ
50µ
20µ
10µ
0
Ta=100°C
25°C
−40°C
V
CC
=5V
20
10
5
2
1
500m
200m
100m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
Ta=−40°C
25°C
100°C
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I (off)
(V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
V
O
=5V
1
500m
OUTPUT VOLTAGE : V
O (on)
(V)
l
O
/l
I
=20
DC CURRENT GAIN : G
I
200
100
50
20
10
5
2
1
100µ 200µ
Ta=100°C
25°C
−40°C
200m
100m
50m
20m
10m
5m
2m
Ta=100°C
25°C
−40°C
500µ 1m
2m
5m 10m 20m
50m 100m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : I
O
(A)
OUTPUT CURRENT : I
O
(A)
Fig.3 DC current gain vs. output
current
Fig.4 Output voltage vs. output
current
2/3
LESHAN RADIO COMPANY, LTD.
LDTC113ZLT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
K
D
H
K
J
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
C
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
3/3

LDTC113ZLT3G Related Products

LDTC113ZLT3G LDTC113ZLT1G
Description Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,
Is it Rohs certified? conform to conform to
Maker LRC LRC
Reach Compliance Code unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A
Minimum DC current gain (hFE) 33 33
Number of components 1 1
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W
surface mount YES YES
Transistor component materials SILICON SILICON

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1933  1314  449  425  2782  39  27  10  9  57 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号