Preliminary
Datasheet
BCR20FM-14LJ
700V - 20A - Triac
Medium Power Use
Features
I
T (RMS)
: 20 A
V
DRM
: 800 V (Tj = 125 °C)
Tj: 150 °C
I
FGTI
, I
RGTI
, I
RGT
: 30 mA
Viso: 2000V
Insulated Type
Planar Passivation Type
R07DS0981EJ0100
Rev.1.00
Dec 03, 2012
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Note5
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Viso
Symbol
V
DRM
V
DSM
Ratings
20
200
167
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
Voltage class
14
800
700
840
Unit
A
A
A
2
s
W
W
V
A
C
C
g
V
Typical value
Ta=25C, AC 1 minute
T
1
T
2
G terminal to case
Page 1 of 7
Unit
V
V
Conditions
Commercial frequency, sine full wave
360 conduction, Tc = 86C
60 Hz sinewave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Conditions
Tj = 125C
Tj = 150C
R07DS0981EJ0100 Rev.1.00
Dec 03, 2012
BCR20FM-14LJ
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Rated value
Min.
Typ.
Max.
—
—
3.0
—
—
1.5
—
—
—
—
—
—
0.2
0.1
—
10
1
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
30
30
—
—
3.2
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 30A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Tj = 150C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C
Tj = 150C
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 1.
2.
3.
4.
5.
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance R
th (c-f)
in case of greasing is 0.5C/W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –10A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0981EJ0100 Rev.1.00
Dec 03, 2012
Page 2 of 7
BCR20FM-14LJ
Preliminary
Performance Curves
Maximum On-State Characteristics
10
3
Tj = 25°C
200
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
160
10
2
120
80
10
1
40
10
0
0
1
2
3
4
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
V
GM
= 10V
Gate Voltage (V)
10
1
P
G(AV)
=
0.5W
V
GT
= 1.5V
10
0
P
GM
= 5W
I
GM
= 2A
10
2
I
FGT I
I
RGT I
I
RGT III
10
−1
I
RGT I
I
FGT I
, I
RGT III
10
2
V
GD
= 0.1V
10
3
10
4
10
1
10
1
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
Typical Example
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
4
10
3
10
4
3
10
2
2
1
10
1
–40
0
40
80
120
160
0
10
−1
10
0
10
1
10
2
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0981EJ0100 Rev.1.00
Dec 03, 2012
Page 3 of 7
BCR20FM-14LJ
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
Curves apply regardless
of conduction angle
Maximum On-State Power Dissipation
40
On-State Power Dissipation (W)
35
30
25
20
15
10
5
0
0
5
10
15
Case Temperature (°C)
40
140
120
100
80
60
40
360° Conduction
Resistive,
inductive loads
20
25
30
35
360° Conduction
20 Resistive,
inductive loads
0
0
5
10
15
20
25
30
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
All fins are black painted
aluminum and greased
160 160 t2.3
120 120 t2.3
100 100 t2.3
Allowable Ambient Temperature vs.
RMS On-State Current
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Ambient Temperature (°C)
120
100
80
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0
5
10
Ambient Temperature (°C)
140
140
120
100
80
60
40
20
0
0
1
15
20
25
2
3
4
5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Typical Example
10
5
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
Typical Example
10
4
10
2
10
3
10
2
–40
0
40
80
120
160
10
1
−40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS0981EJ0100 Rev.1.00
Dec 03, 2012
Page 4 of 7
BCR20FM-14LJ
Latching Current vs.
Junction Temperature
10
3
Preliminary
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
140
120
100
80
60
40
20
0
−40
0
40
80
120
160
Typical Example
Latching Current (mA)
Distribution T +, G–
2
Typical Example
10
2
10
1
T
2
+, G+
Typical Example
T
2
–, G–
10
0
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
140
120
III Quadrant
100
80
60
40
20
0
10
1
10
2
10
3
10
4
I Quadrant
Typical Example
Tj = 125°C
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
160
140
120
III Quadrant
100
80
60
40
20
0
10
1
10
2
I Quadrant
Typical Example
Tj = 150°C
10
3
10
4
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj = 125°C)
10
2
Commutation Characteristics (Tj = 150°C)
10
2
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
I Quadrant
Minimum
Characteristics
Value
III Quadrant
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
10
1
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Typical Example
Tj = 125°C, I
T
= 4A,
τ
= 500μs
V
D
= 200V, f = 3Hz
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 150°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
I Quadrant
10
1
10
0
10
0
10
1
10
2
10
0
10
0
Minimum
Characteristics
Value
III Quadrant
10
1
10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0981EJ0100 Rev.1.00
Dec 03, 2012
Page 5 of 7
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