Preliminary
Datasheet
BCR20FM-12LB
600V - 20A - Triac
Medium Power Use
Features
I
T (RMS)
: 20 A
V
DRM
: 600 V
Tj: 150 °C
I
FGTI
, I
RGTI
, I
RGTIII
: 30 mA (20mA)
Note5
Insulated Type
Planar Passivation Type
Viso : 2000 V
R07DS0889EJ0100
Rev.1.00
Oct 29, 2012
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Note6
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Viso
Symbol
V
DRM
V
DSM
Ratings
20
200
167
5
0.5
10
2
–40 to +150
–40 to +150
1.9
2000
Unit
A
A
A
2
s
W
W
V
A
C
C
g
V
Voltage class
12
600
720
Conditions
Commercial frequency, sine full wave
360 conduction, Tc = 104C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Unit
V
V
Typical value
Ta = 25C, AC 1 minute
T
1
T
2
G terminal to case
R07DS0889EJ0100 Rev.1.00
Oct 29, 2012
Page 1 of 7
BCR20FM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Rated value
Min.
Typ.
Max.
—
—
3.0
—
—
1.5
—
—
—
—
—
—
0.2
0.1
—
10
1
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
Note5
30
Note5
30
Note5
—
—
2.3
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 30A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Tj = 150C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C
Tj = 150C
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. High sensitivity (I
GT
20 mA) is also available. (I
GT
item: 1)
6. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
1. Junction temperature
Tj = 125/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –10A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0889EJ0100 Rev.1.00
Oct 29, 2012
Page 2 of 7
BCR20FM-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
10
3
240
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
200
160
120
80
40
10
2
Tj = 150°C
10
1
Tj = 25°C
10
0
0
1
2
3
4
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
V
GM
= 10V
Gate Voltage (V)
10
1
V
GT
= 1.5V
10
0
P
GM
= 5W
P
G(AV)
=
0.5W
I
GM
=
2A
10
2
I
FGT I
I
FGT I
, I
RGT I
, I
RGT III
10
−1
10
1
10
2
10
3
10
4
I
RGT I
I
RGT III
10
1
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
Typical Example
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
2.4
2.0
1.6
1.2
0.8
0.4
0
−1
10
10
3
10
4
10
2
10
1
–40
0
40
80
120
160
10
0
10
1
10
2
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0889EJ0100 Rev.1.00
Oct 29, 2012
Page 3 of 7
BCR20FM-12LB
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
Curves apply regardless
of conduction angle
Maximum On-State Power Dissipation
40
On-State Power Dissipation (W)
30
360° Conduction
Resistive,
inductive loads
20
Case Temperature (°C)
15
20
25
30
140
120
100
80
60
40
10
0
0
5
10
360° Conduction
20 Resistive,
inductive loads
0
0
10
20
30
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
All fins are black painted
aluminum and greased
Curves apply regardless of
conduction angle
Resistive, inductive loads
Natural convection
Allowable Ambient Temperature vs.
RMS On-State Current
Natural convection
No fins
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Ambient Temperature (°C)
120
100
80
60
40
160
120
20
100
0
0
Ambient Temperature (°C)
140
140
120
100
80
60
40
20
0
0
1
2
160 t2.3
120 t2.3
100 t2.3
5
10
15
20
25
30
3
4
5
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Typical Example
10
5
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
Typical Example
10
4
10
2
10
3
10
2
–40
0
40
80
120
160
10
1
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS0889EJ0100 Rev.1.00
Oct 29, 2012
Page 4 of 7
BCR20FM-12LB
Latching
Current vs.
Junction
Temperature
10
3
Preliminary
Breakover
Voltage vs.
Junction
Temperature
Breakover
Voltage (Tj
=
t°C)
×
100 (%)
Breakover
Voltage (Tj
=
25°C)
160
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Typical Example
Latching
Current (mA)
Distribution
T +
, G
–
2
Typical Example
10
2
10
1
T
2
+
, G
+
Typical Example
T
2
–
, G
–
10
0
–40
0
40
80
120
160
Junction
Temperature
(°C)
Junction
Temperature
(°C)
Breakover
Voltage (dv/dt
=
xV/μs)
×
100 (%)
Breakover
Voltage (dv/dt
=
1V/μs)
160
140
120
100
80
60
40
20
0
1
10
10
2
I Quadrant
Breakover
Voltage (dv/dt
=
xV/μs)
×
100 (%)
Breakover
Voltage (dv/dt
=
1V/μs)
Breakover
Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Typical Example
Tj =
125°C
Breakover
Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
60
40
20
0
1
10
10
2
10
3
10
4
I Quadrant
III Quadrant
Typical Example
Tj =
150°C
III Quadrant
10
3
10
4
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
10
2
Commutation Characteristics (Tj=150°C)
10
2
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
10
1
Minimum
Characteristics
Value
III Quadrant
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj =
125°C
I
T
= 4A
τ
=
500μs
V
D
=
200V
f
=
3Hz
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj =
150°C
I
T
= 4A
τ
=
500μs
V
D
=
200V
f
=
3Hz
10
1
I Quadrant
III Quadrant
Minimum
Characteristics
Value
10
0
I Quadrant
10
0
3
10
1
30
10
2
3
10
1
30
10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0889EJ0100 Rev.1.00
Oct 29, 2012
Page 5 of 7
PCB Design
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