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FG2000FX50DA

Description
1650A, 2500V, GATE TURN-OFF SCR, PRESSPACK-3
CategoryAnalog mixed-signal IC    Trigger device   
File Size75KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

FG2000FX50DA Overview

1650A, 2500V, GATE TURN-OFF SCR, PRESSPACK-3

FG2000FX50DA Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionDISK BUTTON, O-CEDB-N2
Contacts3
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum DC gate trigger current2500 mA
JESD-30 codeO-CEDB-N2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current1650 A
Off-state repetitive peak voltage2500 V
Repeated peak reverse voltage17 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Trigger device typeGATE TURN-OFF SCR

FG2000FX50DA Preview

MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000FX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
FG2000FX-50DA
OUTLINE DRAWING
Dimensions in mm
GATE (WHITE)
400 ± 8
AUXILIARY CATHODE
CONNECTOR (RED)
φ
63 ± 0.5
φ
3.5 DEPTH 2.2 ± 0.2
CATHODE
TYPE NAME
q
I
TQRM
Repetitive controllable on-state current ...........2200A
q
I
T(AV)
Average on-state current .....................1050A
q
V
DRM
Repetitive peak off state voltage ...................2500V
q
Anode short type
26 ± 0.5
0.4 MIN
0.4 MIN
φ
63±0.5
φ
93 MAX
ANODE
φ
3.5 DEPTH 2.2 ± 0.2
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
R(DC)
V
DRM
V
DSM
V
D(DC)
+
: V
GK
= –2V
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
+
Non-repetitive peak off-state voltage
+
DC off-state voltage
+
Parameter
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
Voltage class
50DA
17
17
17
2500
2500
2000
Conditions
V
DM
= 1875V, T
j
= 125°C, C
S
= 4.0µF, L
S
= 0.3µH
f = 60Hz, sine wave
θ
= 180°, T
f
= 73°C
One half cycle at 60Hz
One cycle at 60Hz
V
D
= 1250V, I
GM
= 30A, T
j
= 125°C
Ratings
2200
1650
1050
16
10.5
×
10
5
1000
10
17
100
650
280
18
50
150
–40 ~ +125
–40 ~ +150
18 ~ 24
760
Unit
V
V
V
V
V
V
Unit
A
A
A
kA
A
2
s
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
Aug.1998
Symbol
I
TQRM
I
T(RMS)
I
T(AV)
I
TSM
I
2t
d
iT
/d
t
V
FGM
V
RGM
I
FGM
I
RGM
P
FGM
P
RGM
P
FG(AV)
P
RG(AV)
T
j
T
stg
Recommended value 20
Standard value
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000FX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol
V
TM
I
RRM
I
DRM
I
RG
d
v
/d
t
t
gt
t
gq
I
GQM
V
GT
I
GT
R
th(j-f)
Parameter
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Turn-off time
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
Test conditions
T
j
= 125°C, I
TM
= 2000A, Instantaneous measurment
T
j
= 125°C, V
RRM
Applied
T
j
= 125°C, V
DRM
Applied, V
GK
= –2V
T
j
= 125°C, V
RG
= 17V
T
j
= 125°C, V
D
= 1250V, V
GK
= –2V
T
j
= 125°C, I
TM
= 2200A, I
GM
= 30A, V
D
= 1250V
T
j
= 125°C, I
TM
= 2200A, V
DM
= 1875V, d
iGQ
/d
t
= –30A/µs
V
RG
= 17V, C
S
= 4.0µF, L
S
= 0.3µH
DC METHOD : V
D
= 24V, R
L
= 0.1Ω, T
j
= 25°C
Junction to fin
Min
1000
Limits
Typ
610
Max
2.4
50
50
50
10
30
1.5
2500
0.017
Unit
V
mA
mA
mA
V/µs
µs
µs
A
V
mA
°C/W
PERFORMANCE CURVES
SURGE ON-STATE CURRENT (kA)
ON-STATE CURRENT (A)
MAXIMUM ON-STATE CHARACTERISTIC
10
4
7
T
j
= 125°C
5
3
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
20
16
12
8
4
0
10
0
2 3
5 7 10
1
2 3
5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
10
0
2 3 5 710
1
0.020
GATE CHARACTERISTICS
THERMAL IMPEDANCE (°C/W)
GATE VOLTAGE (V)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
V
FGM
= 10V
0.016
P
FGM
= 280W
P
FG(AV)
= 50W
V
GT
= 1.5V
0.012
0.008
T
j
= 25°C
I
GT
= 2500mA
I
FGM
= 100A
0.004
0
10
–3
2 3 5 710
–2
2 3 5 710
–1
2 3 5 7 10
0
TIME (S)
10
–1
10
2
2 3 5 7 10
3
2 3 5 7 10
4
2 3 5 7 10
5
GATE CURRENT (mA)
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000FX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ON-STATE POWER DISSIPATION (W)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
4000
3500
3000
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
150
FIN TEMPERATURE (°C)
θ
60° 90°
120° 180°
140
130
120
110
100
90
80
70
θ
= 30°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
360°
RESISTIVE,
2500
INDUCTIVE
LOAD
2000
1500
1000
500
0
0
θ
= 30°
60°
90° 120° 180°
300
600
900
1200
60
0
200
400
600
800
1000 1200
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
ON-STATE POWER DISSIPATION (W)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
4000
DC
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
130
120
3500
3000
2500
2000
1500
1000
500
0
0
500
1000
60°
θ
= 30°
180°
120°
90°
270°
FIN TEMPERATURE (°C)
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
110
100
90
80
70
60
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ
= 30°
60° 90° 180°
120° 270° DC
1500
2000
50
0
500
1000
1500
2000
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
8000
GATE TRIGGER CURRENT (mA)
7000
6000
5000
4000
3000
2000
1000
0
–60
–20
20
V
D
= 5 ~ 20V
I
T
= 25 ~ 200A
HALF SINE WAVE
TURN ON TIME t
gt
, TURN ON DELAY TIME t
d
(µs)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
TURN ON TIME, TURN ON DELAY TIME
VS. TURN ON GATE CURRENT
(TYPICAL)
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0 10 20 30 40 50 60 70 80 90 100
TURN ON GATE CURRENT (A)
t
d
t
gt
I
T
= 2200A
V
D
= 1250V
d
iT
/d
t
= 500A/µs
d
iG
/d
t
= 10A/µs
T
j
= 125°C
60
100
140
JUNCTION TEMPERATURE (°C)
Aug.1998
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000FX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME t
gq
, TURN OFF STORAGE TIME t
s
(µs)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
30
t
gq
TURN OFF TIME t
gq
, TURN OFF STORAGE TIME t
s
(µs)
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
25
t
s
40
20
30
t
gq
15
10
5
V
D
= 1250V
V
DM
= 1875V
d
iGQ
/d
t
= –30A/µs
V
RG
= 17V
C
S
= 4.0µF
L
S
= 0.3µH
T
j
= 125°C
20
V
D
= 1250V
V
DM
= 1875V
I
T
= 2200A
V
RG
= 17V
10
C
S
= 4.0µF
L
S
= 0.3µH
T
j
= 125°C
t
s
0
500
1000
1500
2000
2500
0
10
20
30
40
50
60
TURN OFF CURRENT (A)
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
700
TURN OFF GATE CURRENT (A)
TURN OFF GATE CURRENT (A)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
800
600
700
500
600
400
300
200
V
D
= 1250V
V
DM
= 1875V
d
iGQ
/d
t
= –30A/µs
V
RG
= 17V
C
S
= 4.0µF
L
S
= 0.3µH
T
j
= 125°C
500
400
0
500
1000
1500
2000
2500
300
10
V
D
= 1250V
V
DM
= 1875V
I
T
= 2200A
V
RG
= 17V
C
S
= 4.0µF
L
S
= 0.3µH
T
j
= 125°C
20
30
40
50
60
TURN OFF CURRENT (A)
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN ON SWITCHING ENERGY
(MAXIMUM)
SWITCHING ENERGY Eon (J/P)
SWITCHING ENERGY Eoff (J/P)
V
D
= 1250V
I
GM
= 30A
1.4
d
iG
/d
t
= 10A/µs
C
S
= 4.0µF
1.2
R
S
= 5Ω
T
j
= 125°C
TURN OFF SWITCHING ENERGY
(MAXIMUM)
3.0
2.5
2.0
1.5
1.0
0.5
0
V
D
= 1250V
V
DM
= 1875V
d
iGQ
/d
t
= –30A/µs
V
RG
= 17V
C
S
= 4.0µF
L
S
= 0.3µH
T
j
= 125°C
1.6
d
iT
/d
t
= 500A/µs
300A/µs
1.0
0.8
0.6
200A/µs
100A/µs
0.4
0.2
0
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
TURN ON CURRENT (A)
TURN OFF CURRENT (A)
Aug.1998
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