Preliminary
Datasheet
BCR8PM-14LJ
Triac
Medium Power Use
Features
I
T (RMS)
: 8 A
V
DRM
: 800 V(Tj=125 )
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA
Viso: 2000 V
The Product guaranteed maximum junction
temperature 150C
Insulated Type
Planar Type
UL Recognized: File No. E223904
R07DS0515EJ0100
Rev.1.00
Oct 14, 2011
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F)
2
3
1
1
2
3
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
Applications
washing machine, inversion operation of capacitor motor, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Notes: 1. Gate open.
Symbol
V
DRM
V
DSM
Voltage class
14
800
700
840
Unit
V
V
V
Conditions
Tj=125C
Tj=150C
R07DS0515EJ0100 Rev.1.00
Oct 14, 2011
Page 1 of 7
BCR8PM-14LJ
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
V
iso
Ratings
8
80
26
5
0.5
10
2
–40 to +150
–40 to +150
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
C
C
g
V
Preliminary
Conditions
Commercial frequency, sine full wave
360conduction, Tc = 107C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta=25C AC 1 minute,
T
1
T
2
G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symb
ol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
0.1
—
10
1
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
—
—
4.3
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
V
C/W
V/s
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 12A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Tj = 150C, V
D
= 1/2 V
DRM
Junction to case
Tj = 125C
Tj = 150C
Note3
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage
Note4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C/150C
2.Rate of rise of off-state commutating voltage
(dv/dt)c =-4.0 A/ms
3.Peak off-state voltage
V
D
= 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Main Current
Main Voltage
(dv/dt)c
R07DS0515EJ0100 Rev.1.00
Oct 14, 2011
Page 2 of 7
BCR8PM-14LJ
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
100
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
80
Tj = 150°C
10
1
60
40
Tj = 25°C
10
0
20
0
1
2
3
4
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
V
GM
= 10V
10
1
P
G(AV)
= 0.5W
P
GM
= 5W
I
GM
= 2A
Gate Voltage (V)
V
GT
= 1.5V
10
0
I
RGT III
10
2
I
RGT I
, I
FGT I
10
−1
I
FGT I
I
RGT I
, I
RGT III
10
2
V
GD
= 0.1V
10
3
10
4
10
1
10
1
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
Typical Example
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
5
10
3
10
4
4
3
10
2
2
1
10
1
–40
0
40
80
120
160
0
−1
10
10
0
10
1
10
2
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0515EJ0100 Rev.1.00
Oct 14, 2011
Page 3 of 7
BCR8PM-14LJ
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
10
3
Preliminary
Maximum On-State Power Dissipation
16
On-State Power Dissipation (W)
No Fins
14
12 360° Conduction
Resistive,
10 inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
10
2
10
1
10
0
10
−1
1
10
10
2
10
3
10
4
10
5
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
160
Curves apply regardless
of conduction angle
160
Allowable Ambient Temperature vs.
RMS On-State Current
All fins are black painted
aluminum and greased
120 120 t2.3
100 100 t2.3
60 60 t2.3
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
8
Ambient Temperature (°C)
Case Temperature (°C)
140
140
120
100
80
60
40
20
0
0
2
4
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
6
8
10
12
14
16
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Typical Example
10
5
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
0.5
1.0
10
4
10
3
1.5
2.0
2.5
3.0
10
2
–40
0
40
80
120
160
RMS On-State Current (A)
Junction Temperature (°C)
R07DS0515EJ0100 Rev.1.00
Oct 14, 2011
Page 4 of 7
BCR8PM-14LJ
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
10
3
Preliminary
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
Typical Example
Latching Current (mA)
Distribution
10
2
T
2
+, G–
Typical Example
10
2
10
1
T
2
+, G+
Typical Example
T
2
–, G–
0
40
80
120
160
10
1
−40
0
40
80
120
160
10
0
–40
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
140
120
100
80
60
40
20
0
10
1
10
2
I Quadrant
III Quadrant
Typical Example
Tj = 125°C
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
140
120
100
80
60
40
20
0
−40
0
40
Typical Example
80
120
160
10
3
10
4
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
160
140
120
100
80
60
40
20
0
10
1
10
2
I Quadrant
III Quadrant
Commutation Characteristics (Tj = 125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Typical Example
Tj = 150°C
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
10
1
Minimum
Characteristics
Value
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
I Quadrant
10
0
10
0
III Quadrant
10
1
10
2
10
3
10
4
Rate of Rise of Off-State Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0515EJ0100 Rev.1.00
Oct 14, 2011
Page 5 of 7
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