BCP69
20 V, 1 A PNP medium power transistor
Rev. 06 — 2 December 2008
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor in a Surface-Mounted Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
BCP69
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25
[1]
/DG: halogen-free
Type number
[1]
JEITA
SC-73
Package
configuration
medium power
SOT223
1.2 Features
I
I
I
I
High current
Three current gain selections
1.4 W total power dissipation
Medium power SMD plastic package
1.3 Applications
I
I
I
I
I
Linear voltage regulators
High-side switches
Supply line switches
MOSFET drivers
Audio preamplifier
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
single pulse;
t
p
≤
1 ms
Conditions
open base
Min
-
-
-
Typ
-
-
-
Max
−20
−1
−2
Unit
V
A
A
NXP Semiconductors
BCP69
20 V, 1 A PNP medium power transistor
Quick reference data
…continued
Parameter
DC current gain
BCP69
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25
Conditions
V
CE
=
−1
V;
I
C
=
−500
mA
85
100
140
160
-
-
-
-
375
250
230
375
Min
Typ
Max
Unit
Table 2.
Symbol
h
FE
2. Pinning information
Table 3.
Pin
1
2
3
4
Pinning
Description
base
collector
emitter
collector
1
2
3
3
sym028
Simplified outline
4
Graphic symbol
2, 4
1
3. Ordering information
Table 4.
Ordering information
Package
Name
BCP69
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25
[1]
/DG: halogen-free
Type number
[1]
Description
plastic surface-mounted package with increased
heatsink; 4 leads
Version
SOT223
SC-73
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
2 of 13
NXP Semiconductors
BCP69
20 V, 1 A PNP medium power transistor
4. Marking
Table 5.
BCP69
BCP69-16
BCP69-16/DG
BCP69-16/IN
BCP69-25
[1]
/DG: halogen-free
Marking codes
Marking code
BCP69
BCP69/16
BCP69-16D
69-16N
BCP69/25
Type number
[1]
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
[2]
[3]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
-
-
-
-
−65
−65
Max
−32
−20
−5
−1
−2
−200
0.625
1
1.4
150
+150
+150
Unit
V
V
V
A
A
mA
W
W
W
°C
°C
°C
T
j
T
amb
T
stg
[1]
[2]
[3]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
3 of 13
NXP Semiconductors
BCP69
20 V, 1 A PNP medium power transistor
1.6
P
tot
(W)
1.2
(2)
(1)
mle311
0.8
(3)
0.4
0
−65
−5
55
115
175
T
amb
(°C)
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
-
-
-
-
Max
200
125
89
15
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
thermal resistance from junction
to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
4 of 13
NXP Semiconductors
BCP69
20 V, 1 A PNP medium power transistor
10
2
R
th(j-a)
(K/W)
10
006aab402
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.01
0.02
δ
=
t
1
t
2
P
1
0
t
1
t
2
t
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 6 cm
2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BCP69_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 2 December 2008
5 of 13
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