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BSP130/T3

Description
Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size195KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BSP130/T3 Overview

Power Field-Effect Transistor

BSP130/T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNexperia
package instruction,
Reach Compliance Codecompliant
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED

BSP130/T3 Preview

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D087
BSP130
N-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of 1997 Jun 23
2001 Dec 11
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
FEATURES
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
APPLICATIONS
Line current interruptor in telephone sets
Relay, high-speed and line transformer drivers.
handbook, halfpage
BSP130
PINNING - SOT223
PIN
1
2
3
4
gate
drain
source
drain
DESCRIPTION
4
d
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT223 package.
1
Top view
Marking code
BSP130.
2
3
MAM054
g
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
V
GSO
R
DSon
V
GSoff
PARAMETER
drain-source voltage (DC)
drain current (DC)
total power dissipation
gate-source voltage
drain-source on-state
resistance
gate-source cut-off voltage
T
amb
25
°C
open drain
I
D
= 250 mA; V
GS
= 10 V
I
D
= 1 mA; V
DS
= V
GS
CONDITIONS
0.8
MIN.
MAX.
300
350
1.5
±20
6
2
V
mA
W
V
V
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm
2
.
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
T
amb
25
°C;
note 1
open drain
CONDITIONS
−55
MIN.
MAX.
300
±20
350
1.4
1.5
+150
150
V
V
mA
A
W
°C
°C
UNIT
2001 Dec 11
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
PARAMETER
thermal resistance from junction to ambient; note 1
VALUE
83.3
BSP130
UNIT
K/W
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm
2
.
STATIC CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
GSS
V
GSth
R
DSon
I
DSS
Y
fs
C
iss
C
oss
C
rss
t
on
t
off
PARAMETER
drain-source breakdown voltage
gate-source leakage current
gate-source threshold voltage
drain-source on-state resistance
drain-source leakage current
transfer admittance
input capacitance
output capacitance
feedback capacitance
CONDITIONS
I
D
= 10
µA;
V
GS
= 0
V
GS
=
±20
V; V
DS
= 0
I
D
= 1 mA; V
DS
= V
GS
I
D
= 20 mA; V
GS
= 2.4 V
I
D
= 250 mA; V
GS
= 10 V
V
DS
= 240 V; V
GS
= 0
I
D
= 250 mA; V
DS
= 25 V
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 10 to 0 V
MIN.
300
0.8
200
TYP. MAX. UNIT
4.8
3.7
690
100
21
10
±100
2
10
6
100
120
30
15
V
nA
V
nA
mS
pF
pF
pF
Switching times (see Figs
2
and
3)
turn-on time
turn-off time
6
46
10
60
ns
ns
2001 Dec 11
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP130
handbook, halfpage
handbook, halfpage
VDD = 50 V
90 %
INPUT
10 %
90 %
10 V
0V
ID
50
MBB691
OUTPUT
10 %
ton
toff
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
handbook, halfpage
2
MRC218
handbook, halfpage
250
MLD765
Ptot
(W)
1.5
C
(pF)
200
150
1
100
0.5
50
Coss
Crss
0
10
20
VDS (V)
30
Ciss
0
0
50
100
150
Tj (°C)
200
0
V
GS
= 0; f = 1 MHz; T
j
= 25
°C.
Fig.5
Fig.4 Power derating curve.
Capacitance as a function of drain-source
voltage; typical values.
2001 Dec 11
4

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Maker Nexperia Nexperia Nexperia Nexperia
Reach Compliance Code compliant compliant compliant compliant
Is it Rohs certified? conform to conform to conform to -
Peak Reflow Temperature (Celsius) NOT SPECIFIED 260 260 -
Maximum time at peak reflow temperature NOT SPECIFIED 40 30 -
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