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Datasheet> All Categories > Discrete semiconductor> The transistor> BSM300GA120DN2E3166
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BSM300GA120DN2E3166

Description
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
CategoryDiscrete semiconductor    The transistor   
File Size198KB，11 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric View All

BSM300GA120DN2E3166 Overview

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

BSM300GA120DN2E3166 Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
package instructionMODULE-5
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)300 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X5
Number of components1
Number of terminals5
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2500 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsGENERAL PURPOSE SWITCHING
Transistor component materialsSILICON
Nominal off time (toff)680 ns
Nominal on time (ton)210 ns
VCEsat-Max3 V

BSM300GA120DN2E3166 Preview

BSM300GA120DN2E3166
IGBT Power Module
Preliminary data
• Single switch
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
Type
BSM300GA120DN2E3166
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
GE
= 20 kΩ
Gate-emitter voltage
DC collector current
T
C
= 25 °C
T
C
= 80 °C
Pulsed collector current,
t
p
= 1 ms
T
C
= 25 °C
T
C
= 80 °C
Power dissipation per IGBT
T
C
= 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage,
t
= 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJCD
V
is
-
-
-
-
P
tot
2500
+ 150
-40 ... + 125
≤
0.05
≤
0.065
2500
20
11
F
40 / 125 / 56
sec
Vac
mm
K/W
°C
I
Cpuls
860
600
W
V
GE
I
C
430
300
Symbol
V
CE
V
CGR
1200
± 20
A
Values
1200
Unit
V
V
CE
I
C
Package
SINGLE SWITCH 1
Ordering Code
C67070-A2007-A70
1200V 430A
1
Oct-27-1997
BSM300GA120DN2E3166
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Gate threshold voltage
V
GE
=
V
CE,
I
C
= 12 mA
Collector-emitter saturation voltage
V
GE
= 15 V,
I
C
= 300 A,
T
j
= 25 °C
V
GE
= 15 V,
I
C
= 300 A,
T
j
= 125 °C
Zero gate voltage collector current
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 25 °C
V
CE
= 1200 V,
V
GE
= 0 V,
T
j
= 125 °C
Gate-emitter leakage current
V
GE
= 20 V,
V
CE
= 0 V
AC Characteristics
Transconductance
V
CE
= 20 V,
I
C
= 300 A
Input capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Output capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
Reverse transfer capacitance
V
CE
= 25 V,
V
GE
= 0 V,
f
= 1 MHz
C
rss
-
1.2
-
C
oss
-
3.3
-
C
iss
-
22
-
g
fs
124
-
-
nF
S
I
GES
-
-
320
I
CES
-
-
4
16
5.6
-
nA
V
CE(sat)
-
-
2.5
3.1
3
3.7
mA
V
GE(th)
4.5
5.5
6.5
V
Values
typ.
max.
Unit
2
Oct-27-1997
BSM300GA120DN2E3166
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Switching Characteristics, Inductive Load at
T
j
= 125 °C
Turn-on delay time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 300 A
R
Gon
= 3.3
Ω
Rise time
V
CC
= 600 V,
V
GE
= 15 V,
I
C
= 300 A
R
Gon
= 3.3
Ω
Turn-off delay time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 300 A
R
Goff
= 3.3
Ω
Fall time
V
CC
= 600 V,
V
GE
= -15 V,
I
C
= 300 A
R
Goff
= 3.3
Ω
Free-Wheel Diode
Diode forward voltage
I
F
= 300 A,
V
GE
= 0 V,
T
j
= 25 °C
I
F
= 300 A,
V
GE
= 0 V,
T
j
= 125 °C
Reverse recovery time
I
F
= 300 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -2500 A/µs,
T
j
= 125 °C
Reverse recovery charge
I
F
= 300 A,
V
R
= -600 V,
V
GE
= 0 V
di
F
/dt = -2500 A/µs
T
j
= 25 °C
T
j
= 125 °C
-
-
16
45
-
-
Q
rr
-
0.6
-
µC
t
rr
V
F
1.4
-
1.8
1.35
2.3
-
µs
V
-
80
120
t
f
-
600
800
t
d(off)
-
110
220
t
r
-
100
200
t
d(on)
ns
Values
typ.
max.
Unit
3
Oct-27-1997
BSM300GA120DN2E3166
Power dissipation
P
tot
=
ƒ(T
C
)
parameter:
T
j
≤
150 °C
2600
W
2200
P
tot
2000
1800
1600
Safe operating area
I
C
=
ƒ(V
CE
)
parameter:
D
= 0,
T
C
= 25°C ,
T
j
≤
150 °C
10
4
A
I
C
10
3
t
= 19.0µs
p
100 µs
1400
1200
1000
800
10
2
1 ms
10
1
600
400
200
0
0
20
40
60
80
100
120
°C
160
10
0
0
10
10
1
10 ms
DC
10
2
10
3
V
T
C
V
CE
Collector current
I
C
=
ƒ(T
C
)
parameter:
V
GE
≥
15 V ,
T
j
≤
150 °C
500
A
I
C
400
350
300
250
200
150
100
50
0
0
Transient thermal impedance
Z
th JC
=
ƒ(t
p
)
parameter:
D = t
p
/
T
10
0
K/W
10
-1
IGBT
Z
thJC
10
-2
D = 0.50
10
-3
0.20
0.10
0.05
10
-4
single pulse
0.02
0.01
20
40
60
80
100
120
°C
160
10
-5
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
T
C
t
p
4
Oct-27-1997
BSM300GA120DN2E3166
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 25 °C
600
A
500
I
C
450
400
350
300
250
200
150
100
50
0
0
1
2
3
V
V
CE
5
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p
= 80 µs,
T
j
= 125 °C
600
A
500
I
C
450
400
350
300
250
200
150
100
50
0
0
1
2
3
V
V
CE
5
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
p
= 80 µs,
V
CE
= 20 V
600
A
500
I
C
450
400
350
300
250
200
150
100
50
0
0
2
4
6
8
10
V
14
V
GE
5
Oct-27-1997
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