BCW68G
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
Mounting Pad Layout
Pin Configuration
1.
Base
2.
Emitter
3.
Collector
0.031 (0.8)
1
2
max. .004 (0.1)
0.035 (0.9)
0.079 (2.0)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Features
Dimensions in inches and (millimeters)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking Code:
DG
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Ratings at 25°C ambient temperature unless otherwise specified.
• PNP Silicon Epitaxial Planar Transistors
• Suited for low level, low noise, low frequency
applications in hybrid cicuits.
• Low Current, Low Voltage.
• As complementary type, BCW66G NPN
transistor is recommended.
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Base Current (DC)
Peak Base Current
Power Dissipation, T
S
= 79°C
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Soldering Point
Note:
(1) Mounted on FR-4 printed-ciruit board.
Symbol
–V
CEO
–V
CBO
–V
EBO
–I
C
–I
CM
–I
B
–I
BM
P
tot
T
j
T
STG
R
θJA
R
θJS
Value
45
60
5.0
800
1.0
100
200
330
150
–65 to +150
≤
285
(1)
≤
215
Unit
V
V
V
mA
A
mA
mA
mW
°C
°C
°C/W
°C/W
Document Number 88173
09-May-02
www.vishay.com
1
BCW68G
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
DC Current Gain
(1)
at V
CE
= 10V, I
C
= 100µA
at V
CE
= 1V, I
C
= 10mA
at V
CE
= 1V, I
C
= 100mA
at V
CE
= 2V, I
C
= 500mA
Collector-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
at I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
at I
C
= 500mA, I
B
= 50mA
Collector-Emitter Breakdown Voltage
at I
C
= 10mA, I
B
= 0
Collector-Base Breakdown Voltage
at I
C
= 10µA, I
B
= 0
Emitter-Base Breakdown Voltage
at I
E
= 10µA, at I
C
= 0
Collector-Base Cut-off Current
at V
CB
= 45V, I
E
= 0
at V
CB
= 45V, I
E
= 0, T
A
= 150°C
Emitter-Base Cut-off Current
at V
EB
= 4V, I
C
= 0
Gain-Bandwidth Product
at V
CE
= 5V, I
C
= 50mA, f = 20MH
Z
Collector-Base Capacitance
at V
CB
= 10V, f = 1MHz
Emitter-Base Capacitance
at V
EB
= 0.5V, f = 1MHz
Note:
(1) Pulse test: t
≤
300µs, D = 2%
(T
A
= 25°C unless otherwise noted)
Symbol
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
BEsat
V
BEsat
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
Min.
50
120
160
60
–
–
–
–
45
60
5
TYP.
–
–
250
–
–
–
–
–
–
–
–
Max.
–
–
400
–
0.3
0.7
1.25
2
–
–
–
Unit
–
–
–
–
V
V
V
V
V
V
V
I
CBO
I
CBO
I
EBO
f
T
C
CB
C
EB
–
–
–
–
–
–
–
–
–
200
6
60
20
20
20
–
–
–
nA
µA
nA
MHz
pF
pF
www.vishay.com
2
Document Number 88173
09-May-02
BCW68G
Vishay Semiconductors
formerly General Semiconductor
Fig. 1 - Switching Waveforms
10%
INPUT
90%
t
on
t
off
10%
OUTPUT
90%
10%
t
d
t
r
t
s
t
f
90%
Document Number 88173
09-May-02
www.vishay.com
3
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
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Document Number: 91000
Revision: 18-Jul-08
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