BF620TA datasheet, PDF - EEWORLD Datasheet

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BF620TA: DescriptionSmall Signal Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size33KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BF620TA Overview

Small Signal Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon

BF620TA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.05 A
Collector-based maximum capacity	1.6 pF
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PSSO-F3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	FLAT
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.6 V

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SOT89 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 5 – MARCH 2001

✪

FEATURES

* High breakdown and low saturation voltages

APPLICATIONS

* Suitable for video output stages in TV sets

* Switching power supplies

COMPLEMENTARY TYPE:

BF621

PARTMARKING DETAIL –

DC

BF620

C

E

C

B

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

VALUE

300

5

100

50

1

-65 to +150

UNIT

V

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Colector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward

Current Transfer Ratio

Transition Frequency

Output Capacitance

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

CER

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

f

T

C

obo

50

100 Typical

0.8 Typical

MHz

pF

MIN.

300

5

10

20

50

10

0.6

0.9

MAX.

UNIT

V

nA

µ

A

nA

µ

A

CONDITIONS.

I

C

=10

µ

A, I

E

=0

I

C

=1mA, I

B

=0*

I

E

=100

µ

A, I

C

=0

V

CB

=200V, I

E

=0

V

CB

=200V, I

E

=0 †

V

CE

=200V, R

BE

=2.7K

Ω

V

CE

=200V, R

BE

=2.7K

Ω

†

V

EB

=5V, I

C

=0

I

C

=30mA, I

B

=5mA*

I

C

=20mA, I

B

=2mA*

I

C

=25mA, V

CE

=20V*

I

C

=10mA, V

CE

=10V

f=100MHz

V

CB

=30V, f=1MHz

µ

A

V

†T

amb

=150°C

*Measured under pulsed conditions.

For typical characteristics graphs see FMMTA42 datasheet.

TBA

BF620TA Related Products

	BF620TA	BF620TC
Description	Small Signal Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon	Transistor
Is it Rohs certified?	incompatible	incompatible
Maker	Zetex Semiconductors	Zetex Semiconductors
Reach Compliance Code	unknown	unknown
JESD-609 code	e0	e0
Humidity sensitivity level	1	1
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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