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BDS17-QR-B

Description
Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size198KB,3 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
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BDS17-QR-B Overview

Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN

BDS17-QR-B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionFLANGE MOUNT, S-MSFM-P3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
Maximum collector current (IC)8 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeS-MSFM-P3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz

BDS17-QR-B Preview

SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BDS16 / BDS17
High Voltage
Hermetic TO220M (T0-257AB) Isolated Metal Package
Ideally suited for Power Linear, Switching
and general Purpose Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
BDS16
VCBO
VCEO
VEBO
IE, IC
IB
PD
TJ
T stg
Collector – Base Voltage (IE = 0)
Collector – Emitter Voltage (IB = 0)
Emitter – Base Voltage (IC = 0)
Emitter, Collector Current
Base Current
Total Power Dissipation at
Junction Temperature Range
Storage Temperature Range
120V
120V
BDS17
150V
150V
TC
=
25°C
5V
8A
2A
43.75W
+200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
4.0
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 3347
Issue 3
Page 1 of 1
Website:
http://www.semelab-tt.com
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BDS16 / BDS17
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
ICBO
ICEO
IEBO
VCEO(sus)
VCE(sat)
VBE(on)
hFE
(1)
(1)
(1)
Parameters
Collector Cut-Off Current
(IE = 0)
Collector Cut-Off Current
(IB = 0)
Emitter Cut-Off Current
(IC = 0)
Collector – Emitter
Sustaining Voltage (IB = 0)
Collector – Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Test Conditions
BDS16
BDS17
BDS16
BDS17
VCB = 120V
VCB = 150V
VCE = 60V
VCE = 75V
VEB = 5V
BDS16
BDS17
IC = 4.0A
IC = 0.5A
IC = 1.0A
IC = 0.5A
IC = 4A
IC = 100mA
IC = 100mA
IB = 0.4A
IB = 0.05A
VCE = 2.0V
VCE = 2.0V
VCE = 2.0V
Min.
Typ
Max.
20
0.1
0.1
10
Units
µA
mA
µA
V
120
150
1.5
0.4
1.0
40
15
250
150
V
V
(1)
DYNAMIC CHARACTERISTICS
fT
ton
ts
tf
Transition Frequency
IC = 0.5A
F = 20MHz
IC = 2A
IB1 = 0.2A
IC = 2A
IB1 = - IB2 = 0.2A
VCC = 80V
VCC = 80V
VCE = 10V
30
MHz
Turn-On Time
Storage Time
Fall Time
0.5
2.0
0.3
µs
Notes
(1) Pulse Width
300us,
δ ≤
1.5%
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 3347
Issue 3
Page 2 of 2
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BDS16 / BDS17
MECHANICAL DATA
Dimensions in mm (inches)
4.83 (0.190)
5.33 (0.210)
0.64 (0.025)
0.89 (0.035)
10.92 (0.430)
10.41 (0.410)
13.21 (0.52)
13.72 (0.54)
13.21 (0.52)
13.72 (0.54)
3.56 (0.140)
Dia
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
1
2
3
12.70 (0.500)
14.73 (0.750)
0.89 (0.035)
Dia.
1.27 (0.050)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
TO220M (TO-257AB)
Pin 1 - Base
Pin 2 - Collector
Pin 3 - Emitter
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 3347
Issue 3
Page 3 of 3

BDS17-QR-B Related Products

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Description Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN
Is it Rohs certified? incompatible conform to incompatible conform to incompatible
Maker TT Electronics plc TT Electronics plc TT Electronics plc TT Electronics plc TT Electronics plc
package instruction FLANGE MOUNT, S-MSFM-P3 HERMETIC SEALED, METAL, TO-220M, 3 PIN HERMETIC SEALED, METAL, TO-220M, 3 PIN HERMETIC SEALED, METAL, TO-220M, 3 PIN FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 8 A 8 A 8 A 8 A 8 A
Collector-emitter maximum voltage 150 V 150 V 150 V 120 V 150 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 15 15 15 15
JESD-30 code S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C
Package body material METAL METAL METAL METAL METAL
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 30 MHz 30 MHz 30 MHz 30 MHz 30 MHz
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