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SV1N4944

Description
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size281KB,2 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Download Datasheet Parametric View All

SV1N4944 Overview

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2

SV1N4944 Parametric

Parameter NameAttribute value
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionE-LALF-W2
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY, METALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum output current1 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
GuidelineMIL-19500
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time5 µs
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
SENSITRON
___
SEMICONDUCTOR
Your Power Solutions Provider
1N4942 thru 1N4948
Standard
FAST RECOVERY RECTIFIERS
______________________________________________________________________________________
TECHNICAL DATA
A
VAILABLE AS
DATA SHEET 5109, REV. A
1N
JAN
JANTX
JANTXV
EQUIVALENT (SJ,SX,SV)*
Fast Recovery Rectifiers
*Sensitron equivalent diodes are manufactured and screened to MIL-PRF-19500 flow and guidelines starting from wafer
fabrication through assembly and testing using our internal specification.
DESCRIPTION:
This voidless hermetically sealed fast recovery rectifier diode series is military qualified per MIL-
PRF-19500/359 and is targeted for commerical and military aircraft, military vehicles, space,
shipboard markets and all high reliability and space applications.
FEATURES / BENEFITS:
Hermetic, non-cavity glass package
Category I Metallurgically bonded
JAN/ JANTX/ JANTXV available per
MIL-PRF-19500/359
Tin/Lead hot solder dip ( HSD) termination
finish
MAXIMUM RATINGS
Operating and Storage Temperature: -65 C to
+175 C
Solder temperature: 260 C for 10s (max)
Thermal Resistance: 38 C (junction to lead)
Forward surge current: 15A @ 8.3 ms half-sine
o
o
o
o
ELECTRICAL CHARACTERISTICS
TYPE
NUMBER
PEAK
INVERSE
VOLTAGE
MIN
BREAKDOWN
VOLTAGE
AVG
RECTIFIED
CURRENT
Amps
55 C
1.0
MAXIMUM
REVERSE
CURRENT
@ PIV
Amps
25 C 150 C
1.0
200
MAX.
FORWARD
VOLTAGE
(PULSED)
V
F
@ 1A
V
1.3
MAX.
CAP.
C @ -12V
pF
45
35
25
20
15
MAXIMUM
SURGE
1
CURRENT
I
FSM
Amps
15
MAXIMUM
REVERSE
RECOVERY
2
TIME
T
rr
nsec
5000
1N4942
1N4944
1N4946
1N4947
1N4948
Volts
200
400
600
800
1000
Volts
220
440
660
880
1100
35
25
20
15
Note 1: I
o
= 1A, 8ms surge
Note 2: I
F
=0.5A, Irm=1A, I
r(REC)
=.250A
©2008 Sensitron Semiconductor 221 West Industry Court
Deer Park, NY 11729-4681
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com
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