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BD2270HFV_11

Description
Controller ICs for High Side NMOSFET
File Size292KB,13 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet View All

BD2270HFV_11 Overview

Controller ICs for High Side NMOSFET

Power Management Switch ICs for PCs and Digital Consumer Products
Controller ICs
for High Side NMOSFET
BD2270HFV
No.11029EBT01
●Description
The BD2270HFV is an IC with a single built-in external N-channel MOSFET driver circuit. This IC has a built-in charge
pump circuit for gate drive and output discharge circuit, enabling configuration of a high side load switch for N-channel
MOSFET drive without using any external parts.
In addition, the control input terminal has a built-in comparator with hysteresis function, facilitating control of the power up
sequence. The space saving type of HVSOF5 package is used.
●Features
1) Built-in charge pump
2) Built-in discharge circuit for output charge
3) Soft start circuit
4) Built-in comparator with hysteresis function at control input terminal
5) Compact HVSOF5 package
6) Operating current 50μA
7) Standby current 5μA
8) Possible to drive N-channel power MOSFET
●Applications
PCs, PC peripheral devices, digital consumer electronics, etc.
●Absolute
Maximum Ratings
Parameter
Supply voltage
AEN voltage
DISC voltage
GATE voltage
Storage temperature range
Power dissipation
Symbol
V
CC
V
AEN
V
DISC
V
GATE
T
STG
Pd
Ratings
-0.3 ~ 6.0
-0.3 ~ 6.0
-0.3 ~ 6.0
-0.3 ~ 15.0
-55 ~ 150
669
*1
Unit
V
V
V
V
°C
mW
*1 When mounted on a 70 mm70 mm1.6 mm glass epoxy PCB, derated at 5.352 mW/C above Ta½25C
*2 This IC is not designed to be radiation-proof.
●Operating
Conditions
Parameter
Operating voltage range
Operating temperature range
Symbol
V
CC
T
OPR
Ratings
2.7 ~ 5.5
-25 ~ 85
Unit
V
°C
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/12
2011.05 - Rev.B
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