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BD235

Description
2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
File Size1MB,2 Pages
ManufacturerETC1
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BD235 Overview

2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126

BD235 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current2 A
Maximum Collector-Emitter Voltage60 V
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
Transistor component materialsSILICON
Maximum ambient power consumption25 W
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor40
Rated crossover frequency3 MHz

BD235 Related Products

BD235 BD237 BD233
Description 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 POWER TRANSISTOR 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
state ACTIVE ACTIVE ACTIVE
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Number of terminals 3 - 3
Transistor polarity NPN - NPN
Maximum collector current 2 A - 2 A
Maximum Collector-Emitter Voltage 60 V - 60 V
packaging shape RECTANGULAR - RECTANGULAR
Package Size FLANGE MOUNT - FLANGE MOUNT
Terminal form THROUGH-HOLE - THROUGH-HOLE
terminal coating TIN LEAD - TIN LEAD
Terminal location SINGLE - SINGLE
Packaging Materials PLASTIC/EPOXY - PLASTIC/EPOXY
structure SINGLE - SINGLE
Number of components 1 - 1
Transistor component materials SILICON - SILICON
Maximum ambient power consumption 25 W - 25 W
Minimum DC amplification factor 40 - 40
Rated crossover frequency 3 MHz - 3 MHz
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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