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BD237

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size1MB,2 Pages
ManufacturerETC1
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POWER TRANSISTOR

BD237 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeGENERAL PURPOSE POWER

BD237 Related Products

BD237 BD235 BD233
Description POWER TRANSISTOR 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
state ACTIVE ACTIVE ACTIVE
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Number of terminals - 3 3
Transistor polarity - NPN NPN
Maximum collector current - 2 A 2 A
Maximum Collector-Emitter Voltage - 60 V 60 V
packaging shape - RECTANGULAR RECTANGULAR
Package Size - FLANGE MOUNT FLANGE MOUNT
Terminal form - THROUGH-HOLE THROUGH-HOLE
terminal coating - TIN LEAD TIN LEAD
Terminal location - SINGLE SINGLE
Packaging Materials - PLASTIC/EPOXY PLASTIC/EPOXY
structure - SINGLE SINGLE
Number of components - 1 1
Transistor component materials - SILICON SILICON
Maximum ambient power consumption - 25 W 25 W
Minimum DC amplification factor - 40 40
Rated crossover frequency - 3 MHz 3 MHz
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