Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BDX78
DESCRIPTION
・With
TO-220C package
・Complement
to type BDX77
APPLICATIONS
・Medium
power switching
・Amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak t
p
=10ms
Base current
Total power dissipation
Junction temperature
Storage temperature
T
mb
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-80
-5
-8
-12
-3
60
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
Thermal resistance from junction to ambient
VALUE
70
UNIT
K/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
I
CBO
I
CEO
I
EBO
f
T
h
FE
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Transition frequency
DC current gain
CONDITIONS
I
C
=-0.2A; I
B
=0
I
C
=-1mA; I
E
=0
I
E
=-1mA; I
C
=0
I
C
=-3A; I
B
=-0.3A
I
C
=-6A; I
B
=-0.6A
I
C
=-6A; I
B
=-0.6A
I
C
=-3A ; V
CE
=-2V
V
CB
=-40V; I
E
=0
V
CE
=-30V; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-0.3A ; V
CE
=-3V
I
C
=-1A ; V
CE
=-2V
7
30
MIN
-80
-100
-5
TYP.
BDX78
MAX
UNIT
V
V
V
-1.0
-1.5
-2.0
-1.5
-0.1
-0.2
-0.5
V
V
V
V
mA
mA
mA
MHz
Switching times
t
on
t
off
Turn-on time
I
C
=2A I
B1
=-I
B2
=0.2A
Turn-off time
2.0
μs
1.0
μs
2
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