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BF1210

Description
RF Manual 16th edition
CategoryDiscrete semiconductor    The transistor   
File Size10MB,130 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BF1210 Overview

RF Manual 16th edition

BF1210 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC PACKAGE-6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationCOMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage6 V
Maximum drain current (Abs) (ID)0.03 A
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Number of components2
Number of terminals6
Operating modeDUAL GATE, ENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.18 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
RF Manual 16 edition
th
Application and design manual
for High Performance RF products
June 2012

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Index Files: 1658  2401  1387  2817  2252  34  49  28  57  46 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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