BF979
Vishay Telefunken
Silicon PNP Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
UHF/VHF uncontrolled prestages with low noise and
low modulation.
Features
D
High cross modulation performance
D
High power gain
3
D
Low noise
D
High reverse attenuation
2
94 9308
13623
1
BF979 Marking: BF979
Plastic case (TO 50)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
T
j
T
stg
Value
20
20
3
50
300
150
–55 to +150
Unit
V
V
V
mA
mW
°
C
°
C
T
amb
≤
60
°
C
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thJA
Value
300
Unit
K/W
Document Number 85006
Rev. 3, 20-Jan-99
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BF979
Vishay Telefunken
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
DC forward current transfer ratio
Test Conditions
–V
CE
= 20 V, V
BE
= 0
–V
CB
= 15 V, I
E
= 0
–V
EB
= 3 V, I
C
= 0
–I
C
= 1 mA, I
B
= 0
–V
CE
= 10 V, –I
C
= 10 mA
Symbol Min Typ Max Unit
–I
CES
100
m
A
–I
CBO
100 nA
–I
EBO
10
m
A
–V
(BR)CEO
20
V
h
FE
20 50
90
Electrical AC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Transition frequency
Transition frequency
Collector-base capacitance
Noise figure
Power gain
Collector current for G
pbmax
Test Conditions
–V
CE
= 10 V, –I
C
= 10 mA, f = 300 MHz
–V
CE
= 10 V, –I
C
= 30 mA, f = 300 MHz
–V
CB
= 10 V, f = 1 MHz
–V
CE
= 10 V, –I
C
= 10 mA, Z
S
= 50
W
,
f = 800 MHz
–V
CE
= 10 V, –I
C
= 10 mA, Z
S
= 50
W
, Z
L
= 500
W,
f = 800 MHz
–V
CE
= 10 V, Z
L
= 500
W,
f = 800 MHz
Sym-
bol
f
T
f
T
C
cb
F
G
pb
–I
C
Min
Typ
1750
1300
0.6
3.4
16
10
Max
Unit
MHz
MHz
pF
dB
dB
mA
4.2
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Document Number 85006
Rev. 3, 20-Jan-99
BF979
Vishay Telefunken
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
350
300
250
200
150
100
50
0
0
12845
C
cb
– Collector Base Capacitance ( pF )
20
40
60
80
100 120 140 160
12876
400
P
tot
– Total Power Dissipation ( mW )
1.0
0.8
0.6
0.4
0.2
0
0
4
8
12
16
20
–V
CB
– Collector Base Voltage ( V )
T
amb
– Ambient Temperature (
°C
)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
2100
f
T
– Transition Frequency ( MHz )
1800
1500
1200
900
600
300
0
0
12848
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
–V
CB
=10V
f=300MHz
5
10
15
20
25
30
35
–I
C
– Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
Document Number 85006
Rev. 3, 20-Jan-99
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BF979
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85006
Rev. 3, 20-Jan-99
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