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BFL4026_12

Description
General-Purpose Switching Device Applications
File Size375KB,7 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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BFL4026_12 Overview

General-Purpose Switching Device Applications

Ordering number : ENA1797A
BFL4026
SANYO Semiconductors
DATA SHEET
BFL4026
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ON-resistance RDS(on)=2.8
Ω
(typ.)
10V drive
Input capacitance Ciss=650pF (typ.)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
Symbol
VDSS
VGSS
IDc*1
IDpack*2
IDP
PD
Tch
Tstg
EAS
IAV
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1%
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
Conditions
Ratings
900
±30
5
3.5
10
2.0
35
150
--55 to +150
132
5
Unit
V
V
A
A
A
W
W
°C
°C
mJ
A
Note :
*1
Shows chip capability
*2
Package limited
*3
SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4
VDD=50V, L=10mH, IAV=5A (Fig.1)
*5
L
10mH, single pulse
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
3.3
4.7
2.54
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
BFL4026-1E
Marking
Electrical Connection
2
15.8
15.87
6.68
3.23
FL4026
LOT No.
1
2.76
1.47 MAX
0.8
1
2
3
12.98
3
0.5
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3FS
2.54
2.54
http://semicon.sanyo.com/en/network
71112 TKIM/70710QB TKIM TC-00002399 No.A1797-1/7

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