Ordering number : ENA1797A
BFL4026
SANYO Semiconductors
DATA SHEET
BFL4026
Features
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
•
ON-resistance RDS(on)=2.8
Ω
(typ.)
10V drive
Input capacitance Ciss=650pF (typ.)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
Symbol
VDSS
VGSS
IDc*1
IDpack*2
IDP
PD
Tch
Tstg
EAS
IAV
Limited only by maximum temperature Tch=150°C
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
PW≤10μs, duty cycle≤1%
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
Conditions
Ratings
900
±30
5
3.5
10
2.0
35
150
--55 to +150
132
5
Unit
V
V
A
A
A
W
W
°C
°C
mJ
A
Note :
*1
Shows chip capability
*2
Package limited
*3
SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4
VDD=50V, L=10mH, IAV=5A (Fig.1)
*5
L
≤
10mH, single pulse
Package Dimensions
unit : mm (typ)
7528-001
10.16
3.18
3.3
4.7
2.54
Product & Package Information
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
BFL4026-1E
Marking
Electrical Connection
2
15.8
15.87
6.68
3.23
FL4026
LOT No.
1
2.76
1.47 MAX
0.8
1
2
3
12.98
3
0.5
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3FS
2.54
2.54
http://semicon.sanyo.com/en/network
71112 TKIM/70710QB TKIM TC-00002399 No.A1797-1/7
BFL4026
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
IS=5A, VGS=0V
See Fig.3
IS=5A, VGS=0V, di/dt=100A/μs
VDS=200V, VGS=10V, ID=5A
See Fig.2
VDS=30V, f=1MHz
Conditions
ID=10mA, VGS=0V
VDS=720V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=20V, ID=2.5A
ID=2.5A, VGS=10V
2.0
1.4
2.8
2.8
650
100
35
14
37
117
39
33
5.3
16.5
0.85
720
4700
1.2
3.6
Ratings
min
900
1.0
±100
4.0
typ
max
Unit
V
mA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Avalanche Resistance Test Circuit
D
≥50Ω
RG
L
Fig.2 Switching Time Test Circuit
10V
0V
VIN
VDD=200V
ID=2.5A
RL=80Ω
D
VDD
PW=10μs
D.C.≤0.5%
G
VOUT
G
S
BFL4026
VIN
10V
0V
50Ω
BFL4026
P.G
RGS=50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
D
500μH
S
VDD=50V
BFL4026
G
Driver MOSFET
Ordering Information
Device
BFL4026-1E
Package
TO-220F-3FS
Shipping
50pcs./magazine
memo
Pb Free
No.A1797-2/7
BFL4026
10
9
8
ID -- VDS
Tc=25
°
C
15V
10V
8
7
ID -- VGS
VDS=20V
Tc= --25
°
C
Drain Current, ID -- A
6
5
4
3
2
1
0
Drain Current, ID -- A
7
6
5
4
3
2
1
0
7V
25
°
C
75
°
C
6V
5V
VGS=4V
0
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
IT15762
Drain-to-Source Voltage, VDS -- V
9
8
RDS(on) -- VGS
IT15761
10
9
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
ID=2.5A
Single pulse
Single pulse
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
7
6
5
4
3
2
1
0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
8
7
6
5
4
3
2
1
0
--50
--25
0
25
50
75
100
125
150
Tc=75
°
C
25
°
C
--25
°
C
=1
GS
V
.5
=2
, ID
0V
A
Gate-to-Source Voltage, VGS -- V
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
|
y
fs
|
-- ID
25
5
°
C
--2
=
Tc
°
C
75
IT15763
2
10
7
5
Case Temperature, Tc --
°
C
IS -- VSD
IT15764
Forward Transfer Admittance,
|
y
fs
|
-- S
VDS=20V
°
C
Source Current, IS -- A
VGS=0V
Single pulse
3
2
1.0
7
5
0.1
7
5
3
2
Drain Current, ID -- A
7
5
SW Time -- ID
5 7 10
IT15765
0.01
0.2
0.4
Tc=
7
3
2
0.6
--25
°
C
0.8
25
°
C
5
°
C
1.0
1.2
IT15766
VDD=200V
VGS=10V
Ciss, Coss, Crss -- pF
5
3
2
1000
7
5
3
2
100
7
5
3
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
f=1MHz
Switching Time, SW Time -- ns
3
2
td (off)
Ciss
100
7
5
3
2
tf
tr
Co
Cr
ss
ss
td(on)
10
7
0.1
2
3
5
7
1.0
2
3
5
10
IT15767
7
10
0
5
10
15
20
25
30
35
40
45
50
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
IT15768
No.A1797-3/7
BFL4026
10
9
VGS -- Qg
VDS=200V
ID=5A
Drain Current, ID -- A
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
IDP=10A (PW≤10μs)
μ
s
10
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
IDc(*1)=5A
IDpack(*2)=3.5A
s
m
n
10
ms
atio
0
r
10
ope
1m
s
10
s
0
μ
Operation in
this area is
limited by RDS(on).
Tc=25°C
Single pulse
2 3
5 7 1.0
0.01
0.1
*1.
Shows chip capability
*2.
SANYO's ideal heat dissipation condition
2 3
5 7 10
2 3
5 7100
2 3
Total Gate Charge, Qg -- nC
2.5
PD -- Ta
IT15769
40
Drain-to-Source Voltage, VDS -- V
PD -- Tc
DC
5 71000 2
IT15770
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
35
30
25
20
15
10
5
0
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
120
EAS -- Ta
IT15771
Case Temperature, Tc --
°C
IT15772
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta --
°C
No.A1797-4/7
BFL4026
Magazine Specification
BFL4026-1E
No.A1797-5/7
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
