BFR181
NPN Silicon RF Transistor*
•
For low noise, high-gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA
•
f
T
= 8 GHz,
F
= 0.9 dB at 900 MHz
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
* Short term description
3
1
2
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFR181
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
2)
T
S
≤
91 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
3)
1
Pb-containing
2
T
3
For
Marking
RFs
Pin Configuration
1=B
2=E
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
3=C
Value
12
20
20
2
20
2
175
150
-65 ... 150
-65 ... 150
Value
≤
335
Package
SOT23
Unit
V
mA
mW
°C
Unit
K/W
package may be available upon special request
S
is measured on the collector lead at the soldering point to the pcb
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-03-30
BFR181
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain-
I
C
= 5 mA,
V
CE
= 8 V, pulse measured
h
FE
70
100
140
-
I
EBO
-
-
1
µA
I
CBO
-
-
100
nA
I
CES
-
-
100
µA
V
(BR)CEO
12
-
-
V
typ.
max.
Unit
2
2007-03-30
BFR181
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 10 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 2 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
I
C
= 2 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
Power gain, maximum stable
1)
I
C
= 10 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
Power gain, maximum available
2)
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Transducer gain
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 900 MHz
I
C
= 5 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 MHz
1
G
2
G
6
-
8
0.27
-
0.45
GHz
pF
C
cb
C
ce
-
0.2
-
C
eb
-
0.35
-
F
-
-
G
ms
-
0.9
1.2
18.5
-
-
-
dB
dB
G
ma
-
12.5
-
dB
|S
21e
|
2
-
-
14.5
9.5
-
-
dB
ms
= |
S
21
/
S
12
|
1/2
ma = |
S
21e /
S
12e| (k-(k²-1) )
3
2007-03-30
BFR181
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
0.0010519
22.403
1.7631
5.1127
1.6528
6.6315
1.8168
17.028
1.0549
1.1633
2.7449
0
3
fA
V
-
V
-
Ω
fF
ps
mA
V
ns
-
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
96.461
0.12146
16.504
0.24951
9.9037
2.1372
0.73155
0.33814
0
0.30013
0
0
0.99768
-
A
-
A
Ω
-
V
-
deg
-
fF
-
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
0.90617
12.603
0.87757
0.01195
0.69278
2.2171
0.43619
0.12571
319.69
0.082903
0.75
1.11
300
-
fA
-
fA
mA
Ω
-
V
fF
-
V
eV
K
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
C
4
C
1
L
2
B
L
3
C
B’
Transistor
Chip
E’
C’
L
BI
=
L
BO
=
L
EI
=
L
EO
=
L
CI
=
L
CO
=
C
BE
=
C
CB
=
C
CE
=
0.85
0.51
0.69
0.61
0
0.49
73
84
165
nH
nH
nH
nH
nH
nH
fF
fF
fF
C
6
C
2
L
1
C
3
C
5
Valid up to 6GHz
E
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
EHA07524
4
2007-03-30
BFR181
Total power dissipation
P
tot
=
ƒ(
T
S
)
Permissible Pulse Load
R
thJS
=
ƒ(
t
p
)
200
mW
10
3
160
K/W
120
100
80
60
40
20
0
0
120
°C
R
thJS
10
2
140
P
tot
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
20
40
60
80
100
150
10
1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/
P
totDC
=
ƒ(
t
p
)
10
2
P
totmax
/P
totDC
-
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
5
2007-03-30
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