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BFR360F_10

Description
NPN Silicon RF Transistor
File Size545KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet View All

BFR360F_10 Overview

NPN Silicon RF Transistor

BFR360F
NPN Silicon RF Transistor
Low noise amplifier for low current applications
Collector design supports 5V supply voltage
For oscillators up to 3.5 GHz
Low noise figure 1.0 dB at 1.8 GHz
Pb-free (RoHS compliant) package
Qualified according AEC Q101
3
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFR360F
Parameter
Marking
FBs
Pin Configuration
1=B
2=E
3=C
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
Stg
Symbol
R
thJS
Value
Package
TSFP-3
Unit
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
98°C
6
15
15
2
35
4
210
150
-55 ... 150
Value
250
V
mA
mW
°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Unit
Junction - soldering point
2)
1
T
K/W
S is measured on the collector lead at the soldering point to the pcb
2
For calculation of
R
thJA
please refer to Application Note AN077 Thermal Resistance
1
2010-05-20
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