BFS17A/BFS17AR/BFS17AW
Vishay
Semiconductors
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Wide band, low noise, small signal amplifiers up to
UHF frquencies, high speed logic applications and os-
cillator applications.
Features
D
Low noise figure
D
High power gain
D
Small collector capacitance
1
1
13 581
94 9280
9510527
13 581
2
3
3
2
BFS17A Marking: E2
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
BFS17AR Marking: E5
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
1
13 652
13 570
2
3
BFS17AW Marking: WE2
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
25
15
2.5
25
200
150
–65 to +150
Unit
V
V
V
mA
mW
°
C
°
C
T
amb
≤
60
°
C
Document Number 85039
Rev. 4, 20-Jan-99
www.vishay.com
1 (10)
BFS17A/BFS17AR/BFS17AW
Vishay
Semiconductors
Maximum Thermal Resistance
T
amb
= 25
_
C, unless otherwise specified
Parameter
Test Conditions
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 m Cu
Symbol
R
thJA
Value
450
Unit
K/W
m
Electrical DC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
V
CE
= 25 V, V
BE
= 0
V
CB
= 10 V, I
E
= 0
V
EB
= 2.5 V, I
C
= 0
I
C
= 1 mA, I
B
= 0
I
C
= 20 mA, I
B
= 2 mA
V
CE
= 1 V, I
C
= 2 mA
V
CE
= 1 V, I
C
= 25 mA
Symbol Min Typ Max Unit
I
CES
100
A
I
CBO
100 nA
I
EBO
10
A
V
(BR)CEO
15
V
V
CEsat
0.1 0.6
V
h
FE
20 50 150
h
FE
20
m
m
Electrical AC Characteristics
T
amb
= 25
_
C, unless otherwise specified
Test Conditions
V
CE
= 5 V, I
C
= 2 mA, f = 300 MHz
V
CE
= 5 V, I
C
= 14 mA, f = 300 MHz
V
CE
= 5 V, I
C
= 30 mA, f = 300 MHz
Collector-base capacitance
V
CB
= 10 V, f = 1 MHz
Collector-emitter capacitance V
CE
= 5 V, f = 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V, f = 1 MHz
Noise figure
V
CE
= 5 V, I
C
= 2 mA, Z
S
= 50 ,
f = 800 MHz
Power gain
V
CE
= 10 V, I
C
= 14 mA, Z
S
= 50 ,
f = 800 MHz
Linear output voltage – two
V
CE
= 10 V, I
C
= 14 mA, d
IM
= 60 dB,
tone intermodulation test
f
1
= 806 MHz, f
2
= 810 MHz,
Z
S
= Z
L
= 50
Third order intercept point
V
CE
= 10 V, I
C
= 14 mA, f = 800 MHz
Parameter
Transition frequency
q
y
Symbol
f
T
f
T
f
T
C
cb
C
ce
C
eb
F
G
pe
V
1
= V
2
Min
Typ
1.5
3.5
3.2
0.6
0.1
1.1
2.5
13
150
Max
Unit
GHz
GHz
GHz
pF
pF
pF
dB
dB
mV
3
W
W
W
IP
3
23.5
dBm
www.vishay.com
2 (10)
Document Number 85039
Rev. 4, 20-Jan-99
BFS17A/BFS17AR/BFS17AW
Vishay
Semiconductors
Common Emitter S–Parameters
Z
0
= 50
W,
T
amb
= 25
_
C, unless otherwise specified
S11
V
CE
/V
I
C
/mA
f/MHz
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
100
300
500
800
1000
1200
1500
1800
2000
LIN
MAG
0.829
0.672
0.544
0.457
0.442
0.444
0.463
0.474
0.493
0.658
0.485
0.409
0.370
0.369
0.373
0.397
0.417
0.440
0.480
0.376
0.355
0.336
0.336
0.343
0.370
0.393
0.420
ANG
deg
–29.5
–79.5
–113.6
–145.4
–160.1
–172.5
172.1
159.0
153.0
–45.1
–106.3
–139.6
–166.3
–177.7
173.9
162.7
152.7
148.7
–65.1
–130.2
–158.2
–179.7
171.9
165.2
157.2
149.1
147.0
LIN
MAG
6.22
4.80
3.54
2.43
2.03
1.77
1.49
1.31
1.22
12.07
7.43
4.93
3.23
2.65
2.28
1.89
1.64
1.52
17.64
8.89
5.66
3.63
2.95
2.53
2.09
1.80
1.66
S21
ANG
deg
158.9
126.1
105.6
88.0
79.5
72.2
61.7
52.3
45.0
149.5
113.4
96.8
82.7
75.8
69.3
60.3
51.7
44.4
139.7
105.3
91.6
79.6
73.5
67.7
59.3
50.9
44.0
LIN
MAG
0.028
0.064
0.078
0.087
0.093
0.101
0.117
0.142
0.168
0.025
0.048
0.061
0.080
0.094
0.110
0.136
0.166
0.193
0.020
0.039
0.055
0.081
0.098
0.117
0.145
0.177
0.204
S12
ANG
deg
74.2
53.3
45.2
45.7
49.6
54.0
60.6
65.5
65.6
69.6
55.1
55.7
61.4
64.1
66.3
68.2
68.2
65.2
67.8
62.6
66.2
69.7
70.8
71.2
70.8
69.0
65.1
LIN
MAG
0.965
0.812
0.707
0.648
0.639
0.634
0.619
0.596
0.559
0.909
0.668
0.572
0.537
0.540
0.540
0.529
0.510
0.479
0.833
0.570
0.499
0.484
0.492
0.497
0.486
0.470
0.445
S22
ANG
deg
–8.9
–19.2
–21.7
–22.5
–23.9
–26.6
–31.5
–36.2
–39.7
–14.4
–23.0
–21.6
–19.7
–20.6
–23.3
–28.0
–31.5
–33.4
–19.2
–22.9
–19.4
–16.6
–17.6
–20.5
–25.1
–28.2
–29.1
2
5
5
10
Document Number 85039
Rev. 4, 20-Jan-99
www.vishay.com
3 (10)
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