Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・High
voltage
・High-speed
switching
APPLICATIONS
・Horizontal
deflection circuits of colour
TV receivers.
・Line-operated
switch-mode applications.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BU506
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current
Base current(peak)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
700
6
5
8
3
5
100
150
-65-150
UNIT
V
V
V
A
A
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU506
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA; I
B
=0
700
V
V
CEsat
Collector-emitter saturation voltage
I
C
=3A; I
B
=1.33A
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=3A; I
B
=1.33A
1.3
V
h
FE
DC current gain
I
C
=0.1A ; V
CE
=5V
V
CE
=rated; V
BE
=0
T
C
=125℃
V
EB
=6V; I
C
=0
6
13
30
0.5
1.0
10
I
CES
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
Switching times
μs
t
s
Storage time
I
CM
= 3 A; I
B(
end
)
= 1A
L
B
= 12μH
6.5
t
f
Fall time
0.7
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU506
Fig.2 Outline dimensions (unindicated tolerance:
±0.10mm)
3
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