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BYD33MZ

Description
SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size60KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
Download Datasheet Parametric Compare View All

BYD33MZ Overview

SILICON, SIGNAL DIODE

BYD33MZ Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionHERMETICALLY SEALED, glass PACKAGE-2
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsGlass
CraftsmanshipAVALANCHE
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
BL
FEATURES
Low cos t
GALAXY ELECTRICAL
BYD33D(Z)---BYD33M(Z)
VOLTAGE RANGE: 200 --- 1000 V
CURRENT: 1.3 A
FAST RECOVERY RECTIFIERS
DO - 15
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Is opropanol and
s im ilar s olvents
MECHANICAL DATA
Cas e:JEDEC DO--15,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014ounces ,0.39 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYD
33D
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T
A
=75
BYD
33G
400
280
200
BYD
33J
600
420
600
1.3
BYD
33K
800
560
800
BYD
33M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
250
20.0
A
Maximum instantaneous forw ard voltage
(
@ 1.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
1.3
1.0
100.0
300
20
120
-55 ---- + 150
- 55 ---- + 150
V
A
ns
pF
K/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0261040
BL
GALAXY ELECTRICAL
1.

BYD33MZ Related Products

BYD33MZ BYD33M BYD33DZ BYD33GZ BYD33JZ BYD33KZ
Description SILICON, SIGNAL DIODE SILICON, SIGNAL DIODE SILICON, SIGNAL DIODE SILICON, SIGNAL DIODE SILICON, SIGNAL DIODE SILICON, SIGNAL DIODE
Number of terminals 2 2 2 2 2 2
Number of components 1 1 1 1 1 1
Processing package description HERMETICALLY SEALED, glass PACKAGE-2 HERMETICALLY SEALED, glass PACKAGE-2 HERMETICALLY SEALED, glass PACKAGE-2 HERMETICALLY SEALED, glass PACKAGE-2 HERMETICALLY SEALED, glass PACKAGE-2 HERMETICALLY SEALED, glass PACKAGE-2
state DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED DISCONTINUED
packaging shape round round round round round round
Package Size LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Terminal form Wire Wire Wire Wire Wire Wire
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Packaging Materials Glass Glass Glass Glass Glass Glass
Craftsmanship AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
structure single single single single single single
Shell connection isolation isolation isolation isolation isolation isolation
Diode component materials silicon silicon silicon silicon silicon silicon
Diode type Signal diode Signal diode Signal diode Signal diode Signal diode Signal diode

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