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BYM11-800

Description
1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB
CategoryDiscrete semiconductor    diode   
File Size83KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

BYM11-800 Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB

BYM11-800 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Base Number Matches1
BYM11-xxx, RGL41x
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Junction Fast Switching Rectifier
FEATURES
• Superectifier structure for high reliability condition
Superectifier
®
• Ideal for automated placement
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 250 °C
GL41 (DO-213AB)
• AEC-Q101 qualified
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
Package
Diode variation
1.0 A
50 V to 1000 V
30 A
150 ns, 250 ns, 500 ns
1.3 V
175 °C
GL41 (DO-213AB)
Single
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive and telecommunication.
MECHANICAL DATA
Case:
GL41 (DO-213AB), molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
two bands indicate cathode end - 1
st
band
denotes device type and 2
nd
band denotes repetitive peak
reverse voltage rating
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
FAST SWITCHING TIME DEVICE:
1
ST
BAND IS RED
Polarity color bands (2
nd
band)
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
current at T
T
= 55 °C
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated
load
Maximum full load reverse current, full
cycle average at T
A
= 55 °C
Operating junction and storage
temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
T
J
, T
STG
SYMBOL
BYM
11-50
RGL41A
Gray
50
35
50
BYM
11-100
RGL41B
Red
100
70
100
BYM
11-200
BYM
11-400
BYM
11-600
RGL41J
Green
600
420
600
BYM
11-800
BYM
11-1000
UNIT
RGL41D RGL41G
Orange
200
140
200
Yellow
400
280
400
1.0
RGL41K RGL41M
Blue
800
560
800
Violet
1000
700
1000
V
V
V
A
30
A
50
-65 to +175
μA
°C
Revision: 25-Aug-17
Document Number: 88547
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

BYM11-800 Related Products

BYM11-800 BYM11-400 TPS54680_15 BYM11-200 RGL41M-E3/96 BYM11-800-E3/96
Description 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 400 V, SILICON, SIGNAL DIODE, DO-213AB 3-V TO 6-V INPUT, 6-A OUTPUT TRACKING SYNCHRONOUS BUCK PWM SWITCHER WITH INTEGRATED FETs (SWIFT™) FOR SEQUENCING 1 A, 200 V, SILICON, SIGNAL DIODE, DO-213AB DIODE GEN PURP 1KV 1A DO213AB DIODE GEN PURP 800V 1A DO213AB
Reach Compliance Code unknow unknow - unknow unknown unknown
ECCN code EAR99 EAR99 - EAR99 EAR99 EAR99
Configuration - SINGLE - SINGLE SINGLE SINGLE
Diode type - RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - 1.3 V - 1.3 V 1.3 V 1.3 V
Maximum non-repetitive peak forward current - 30 A - 30 A 30 A 30 A
Number of components - 1 - 1 1 1
Maximum operating temperature - 175 °C - 175 °C 175 °C 175 °C
Maximum output current - 1 A - 1 A 1 A 1 A
Maximum repetitive peak reverse voltage - 400 V - 200 V 1000 V 800 V
Maximum reverse recovery time - 0.15 µs - 0.15 µs 0.5 µs 0.5 µs
surface mount - YES - YES YES YES
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