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BYM36A

Description
3 A, 200 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size142KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BYM36A Overview

3 A, 200 V, SILICON, RECTIFIER DIODE

VISHAY
BYM36
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
Features
Glass passivated
Hermetically sealed package
Very low switching losses
Low reverse current
949588
• High reverse voltage
Mechanical Data
Case:
SOD-64 Sintered glass case
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
approx. 858 mg
Applications
Switched mode power supplies
High-frequency inverter circuits
Parts Table
Part
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
Type differentiation
V
R
= 200 V; I
FAV
= 3 A
V
R
= 400 V; I
FAV
= 3 A
V
R
= 600 V; I
FAV
= 3 A
V
R
= 800 V; I
FAV
= 2.9 A
V
R
= 1000 V; I
FAV
= 2.9 A
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Test condition
see electrical characteristics
Part
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
Peak forward surge current
Average forward current
Non repetitive reverse
avalanche energy
Junction and storage
temperature range
I
(BR)R
= 1 A, inductive load
t
p
= 10 ms, half sinewave
BYM36A-BYM36C
BYM36D-BYM36E
Symbol
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FAV
I
FAV
E
R
T
j
= T
stg
Value
200
400
600
800
1000
65
3
2.9
20
- 55 to + 175
Unit
V
V
V
V
V
A
A
A
mJ
°C
Document Number 86012
Rev. 1.6, 12-Aug-04
www.vishay.com
1

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Description 3 A, 200 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE 2.9 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 2.9 A, 1000 V, SILICON, RECTIFIER DIODE
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