BYS13-90
ESD Safe – High Voltage Power Schottky – Rectifier
90V
1.5A
FEATURES
D
D
D
D
D
D
High efficiency
Low forward voltage drop
Negligible switching losses
Low reverse current
High reverse surge capability
High ESD capability
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
T
j
= 25
_
C
Test Conditions
Parameter
Repeptive peak reverse voltage
Continuous reverse voltage
Average forward current
T
j
=76
°
C, V
R
= 90V
Non–repeptive surge forward current
t
p
=10ms, half sinewave
ESD – IEC 1000–4–2
R = 330 , C = 150pF
Junction and storage temperature range
Type
Symbol
V
RRM
V
R
I
FAV
I
FSM
ESD
T
j
=T
stg
Value
90
90
1.5
75
20
–55...+150
Unit
V
V
A
A
kV
°
C
W
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Junction lead
T
L
=constant
Junction ambient Epoxy–glass hard tissue (see figure 1) 35 m * 17mm
2
copper area per electrode
Epoxy–glass hard tissue (see figure 2) 35 m * 50mm
2
copper area per electrode
Symbol
R
thJL
R
thJA
Value
25
150
125
Unit
K/W
K/W
m
m
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Reverse current
Junction Capacitance
Test Conditions
I
F
=100mA
I
F
=3A
I
F
=3A T
j
= 100
°
C
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
°
C
V
R
=4V, f = 1MHz
Type
Symbol
V
F
I
R
C
D
Min
Type Max
430
850 950
700 850
30
5
130
Unit
mV
m
A
mA
pF
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
BYS13-90
ESD Safe – High Voltage Power Schottky – Rectifier
90V
1.5A
RATINGS AND CHARACTERISTIC CURVES
100.000
10.000
T
j
= 150°C
1.000
T
j
= 25°C
0.100
0.010
0.001
0
16480
BYS13-90
100000
V
R
= V
RRM
I
R
– Reverse Current (
m
A )
– Forward Current ( A)
10000
1000
I
F
100
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
F
– Forward Voltage ( V )
16483
25
50
75
100
125
150
T
j
– Junction Temperature (
°C
)
Figure 1. Forward Current vs. Forward Voltage
1.6
I
FAV
– Average Forward Current ( A )
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
16481
Figure 4. Reverse Current vs. Junction Temperature
2000
V
R
= V
R RM
half sinewave
R
thJA
P
R
– Reverse Power Dissipation ( mW )
V
R
= V
RRM
1500
P
R
–Limit
@100%V
R
v
25K/W
1000
P
R
–Limit
@80%V
R
500
0
30
60
90
120
150
16484
25
50
75
100
125
150
T
amb
– Ambient Temperature (
°C
)
T
j
– Junction Temperature (
°C
)
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
1.6
I
FAV
– Average Forward Current ( A )
C
D
– Diode Capacitance ( pF )
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
16482
Figure 5. Max. Reverse Power Dissipation vs.
Junction Temperature
400
350
300
250
200
150
100
50
0
0.1
16485
f=1MHz
R
thJA
v
25K/W
V
R
= V
R RM
half sinewave
20
40
60
80
100 120 140 160
1.0
10.0
100.0
T
amb
– Ambient Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
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