LTE42012RTRAY datasheet, PDF - EEWORLD Datasheet

LTE42012RTRAY: DescriptionTRANSISTOR C BAND, Si, NPN, RF POWER TRANSISTOR, FO-41B, 2 PIN, BIP RF Power; CategoryDiscrete semiconductor The transistor; File Size66KB，1 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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LTE42012RTRAY Overview

TRANSISTOR C BAND, Si, NPN, RF POWER TRANSISTOR, FO-41B, 2 PIN, BIP RF Power

Parameter Name	Attribute value
Maker	NXP
package instruction	FLANGE MOUNT, O-CRFM-F2
Contacts	2
Reach Compliance Code	unknown
Maximum collector current (IC)	0.4 A
Configuration	SINGLE
highest frequency band	C BAND
JESD-30 code	O-CRFM-F2
Number of components	1
Number of terminals	2
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Minimum power gain (Gp)	7 dB
Certification status	Not Qualified
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

	LTE42012RTRAY	PTB42001X	LLE16045XTRAY	LTE42005STRAY
Description	TRANSISTOR C BAND, Si, NPN, RF POWER TRANSISTOR, FO-41B, 2 PIN, BIP RF Power	TRANSISTOR C BAND, Si, NPN, RF POWER TRANSISTOR, FO-41B, 2 PIN, BIP RF Power	TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power	TRANSISTOR C BAND, Si, NPN, RF POWER TRANSISTOR, FO-41B, 2 PIN, BIP RF Power
Maker	NXP	NXP	NXP	NXP
package instruction	FLANGE MOUNT, O-CRFM-F2	FLANGE MOUNT, O-CRFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, O-CRFM-F2
Reach Compliance Code	unknown	unknown	unknown	unknown
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	C BAND	C BAND	L BAND	C BAND
JESD-30 code	O-CRFM-F2	O-CRFM-F2	R-CDFM-F2	O-CRFM-F2
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	RECTANGULAR	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN	NPN
Minimum power gain (Gp)	7 dB	5 dB	10 dB	7.2 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	YES	NO
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	RADIAL	RADIAL	DUAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Contacts	2	2	-	2
Maximum collector current (IC)	0.4 A	-	0.05 A	0.11 A

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