BAT54W-G
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SOD-123
Weight:
approx. 9.4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAT54W-G
ORDERING CODE
BAT54W-G3-08 or BAT54W-G3-18
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
L8
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Repetitive peak reverse voltage
Forward continuous current
(1)
Repetitive peak forward current
(1)
Surge forward current
(1)
Power dissipation
(1)
Note
(1)
Valid provided that electrodes are kept at ambient temperature
t
p
< 1 s,
< 0.5
t
p
= 10 ms
TEST CONDITION
SYMBOL
V
RRM
I
F
I
FRM
I
FSM
P
tot
VALUE
30
200
300
600
150
UNIT
V
mA
mA
mA
mW
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Maximum junction temperature
Storage temperature range
Operating temperature range
Note
(1)
Valid provided that electrodes are kept at ambient temperature
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
650
125
- 65 to + 150
- 55 to + 125
UNIT
K/W
°C
°C
°C
Rev. 1.0, 25-Feb-13
Document Number: 85885
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAT54W-G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reserve breakdown voltage
Leakage current
(1)
TEST CONDITION
Tested with 100 μA pulses
V
R
= 25 V
I
F
= 0.1 mA
I
F
= 1 mA
Forward voltage
(1)
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
Diode capacitance
Reserve recovery time
Note
(1)
Pulse test: t < 300 μs,
< 2 %
p
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA, I
R
= 10 mA,
i
R
= 1 mA, R
L
= 100
SYMBOL
V
(BR)
I
R
V
F
V
F
V
F
V
F
V
F
C
D
t
rr
MIN.
30
2
240
320
400
500
800
10
5
TYP.
MAX.
UNIT
V
μA
mV
mV
mV
mV
mV
pF
ns
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1000
I
F
- Forward Current (mA)
I
R
- Reverse Current (µA)
100
10
1
0.1
0.01
0
18867
1000
T
j
= 125 °C
T
j
= 125 °C
- 40 °C
100
10
1
25 °C
0.1
0.01
0.2
1.2
0.4 0.6 0.8
1
V
F
- Forward
Voltage
(V)
1.4
18869
100 °C
75 °C
50 °C
25 °C
0
5
10
15
20
25
V
R
- Reverse
Voltage
(V)
30
Fig. 1 -
Typical Forward Current vs. Forward Voltage vs.
Various Temperatures
Fig. 3 -
Typical Reverse Current vs. Reverse Voltage vs.
Various Temperatures
14
C
D
- Typical Capacitance (pF)
12
10
8
6
4
2
0
0
18868
4
8
12
16
20
24
V
R
- Reverse
Voltage
(V)
28
Fig. 2 -
Typical Capacitance vs. Reverse Applied Voltage
Rev. 1.0, 25-Feb-13
Document Number: 85885
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000