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PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
Rev. 01 — 16 July 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diode in
a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to
protect up to two signal lines from the damage caused by ESD and other transients.
1.2 Features
I
Unidirectional ESD protection of
two lines
I
Low diode capacitance: C
d
= 17 pF
I
Max. peak pulse power: P
PP
= 160 W
I
Low clamping voltage: V
CL
= 55 V
I
Ultra low leakage current: I
RM
≤
1
µA
I
ESD protection up to 30 kV
I
IEC 61000-4-2; level 4 (ESD)
I
IEC 61000-4-5 (surge); I
PP
= 2.5 A
I
AEC-Q101 qualified
1.3 Applications
I
I
I
I
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Subscriber Identity Module (SIM) card
protection
I
Portable electronics
I
Communication systems
I
10/100 Mbit/s Ethernet
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
C
d
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
-
-
-
17
36
35
V
pF
Parameter
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
cathode (diode 1)
cathode (diode 2)
common anode
1
2
3
3
Simplified outline
Graphic symbol
1
2
006aaa154
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD36VS2UT
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
LF*
Type number
PESD36VS2UT
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
I
PP
Per device
T
j
T
amb
T
stg
[1]
[2]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20
µs
t
p
= 8/20
µs
[1][2]
[1][2]
Min
-
-
-
−55
−65
Max
160
2.5
150
+150
+150
Unit
W
A
°C
°C
°C
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 or 2 to pin 3.
PESD36VS2UT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 July 2009
2 of 12
NXP Semiconductors
PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
Table 6.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
ESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883 (human
body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to pin 2.
[1][2]
Parameter
Conditions
Min
-
-
-
Max
30
400
8
Unit
kV
V
kV
[2]
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD36VS2UT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 July 2009
3 of 12
NXP Semiconductors
PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
I
RM
V
BR
C
d
V
CL
r
dif
[1]
[2]
Parameter
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
Conditions
Min
-
Typ
-
< 0.02
44
17
55
-
Max
36
1
-
35
60
300
Unit
V
µA
V
pF
V
Ω
V
RWM
= 30 V
I
R
= 5 mA
f = 1 MHz;
V
R
= 0 V
I
PP
= 1 A
I
R
= 0.5 mA
[1]
-
40
-
-
-
[1][2]
Measured from pin 1 or 2 to pin 3.
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
20
C
d
(pF)
15
006aab615
10
5
0
0
10
20
30
V
R
(V)
40
f = 1 MHz; T
amb
= 25
°C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
PESD36VS2UT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 16 July 2009
4 of 12
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