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PESD3V3S1UB/DG,115

Description
PESD3V3S1UB - ESD protection diode in SOD523 package SOD 2-Pin
CategoryDiscrete semiconductor    diode   
File Size214KB,11 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

PESD3V3S1UB/DG,115 Overview

PESD3V3S1UB - ESD protection diode in SOD523 package SOD 2-Pin

PESD3V3S1UB/DG,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
Parts packaging codeSOD
Contacts2
Manufacturer packaging codeSOD523

PESD3V3S1UB/DG,115 Preview

PESD3V3S1UB
29 November 2018
ESD protection diode in SOD523 package
Product data sheet
1. General description
Unidirectional ElectroStatic Discharge (ESD) protection diode in a SOD523 plastic package
designed to protect one transmission or data line from the damage caused by ESD and other
transients.
2. Features and benefits
Unidirectional ESD protection of one line
Low clamping voltage: V
CL
= 20 V at I
PPM
= 18 A
ESD protection > 30 kV
IEC 61000-4-5 (surge); I
PPM
= 18 A at t
p
= 8/20 µs
3. Application information
Computers and peripherals
Communication systems
Audio and video equipment
Data lines
CAN bus protection
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V
RWM
C
d
reverse standoff
voltage
diode capacitance
Conditions
T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
Min
-
-
Typ
-
207
Max
3.3
300
Unit
V
pF
Nexperia
PESD3V3S1UB
ESD protection diode in SOD523 package
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
2
K
A
cathode[1]
anode
1
2
Simplified outline
Graphic symbol
1
sym035
2
SOD523
[1]
The marking bar indicates pin 1.
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PESD3V3S1UB
SOD523
Description
plastic, surface-mounted package; 2 leads; 1.2 mm x 0.8 mm x
0.6 mm body
Version
SOD523
7. Marking
Table 4. Marking codes
Type number
PESD3V3S1UB
Marking code
N1
PESD3V3S1UB
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
29 November 2018
2 / 11
Nexperia
PESD3V3S1UB
ESD protection diode in SOD523 package
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PPM
I
PPM
T
j
T
amb
T
stg
V
ESD
Parameter
rated peak pulse power
rated peak pulse current
junction temperature
ambient temperature
storage temperature
electrostatic discharge
voltage
IEC 61000-4-2 (contact discharge)
HBM MIL-STD883
[2]
Conditions
t
p
= 8/20 µs
t
p
= 8/20 µs
[1]
[1]
Min
-
-
-
-55
-65
-
-
Max
330
18
150
150
150
30
10
Unit
W
A
°C
°C
°C
kV
kV
ESD maximum ratings
[1]
[2]
Non-repetitive current pulse 8/20 µs exponentially decay waveform.
Device stressed with ten non-repetitive ESD pulses.
120
I
PP
(%)
80
100 % I
PP
; 8 µs
001aaa630
I
PP
100 %
90 %
e
-t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
t (µs)
40
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
001aaa631
Fig. 1.
8/20 µs pulse waveform according to
IEC 61000-4-5
Fig. 2.
ESD pulse waveform according to IEC
61000-4-2
PESD3V3S1UB
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
29 November 2018
3 / 11
Nexperia
PESD3V3S1UB
ESD protection diode in SOD523 package
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
V
RWM
V
BR
I
RM
C
d
V
CL
r
dif
[1]
Conditions
T
amb
= 25 °C
I
R
= 5 mA; T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
I
PPM
= 1 A; T
amb
= 25 °C
I
PPM
= 18 A; T
amb
= 25 °C
I
R
= 1 mA; T
amb
= 25 °C
[1]
[1]
Min
-
5.2
-
-
-
-
-
Typ
-
5.6
0.7
207
-
-
-
Max
3.3
6
2
300
7
20
400
Unit
V
V
µA
pF
V
V
Ω
reverse standoff
voltage
breakdown voltage
diode capacitance
clamping voltage
differential resistance
reverse leakage current V
RWM
= 3.3 V; T
amb
= 25 °C
Non-repetitive current pulse 8/20 µs exponentially decay waveform.
10
4
P
pp
(W)
10
3
aaa-028900
1.2
P
PP
P
PP(25°C)
0.8
001aaa193
10
2
0.4
10
1
10
10
2
10
3
t
p
(ms)
10
4
0
0
50
100
150
T
j
(°C)
200
T
amb
= 25 °C
t
p
= 8/20 µs exponentially decay waveform.
Fig. 3.
Peak pulse power dissipation as a function of
pulse time; typical values
Fig. 4.
Relative variation of peak pulse power as a
function of junction temperature; typical values
PESD3V3S1UB
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
29 November 2018
4 / 11
Nexperia
PESD3V3S1UB
ESD protection diode in SOD523 package
aaa-028902
240
C
d
(pF)
200
10
I
R
I
R(25°C)
aaa-028990
160
1
120
80
40
0
1
2
3
4
V
R
(V)
5
10
-1
-100
-50
0
50
100
T
j
(°C)
150
f = 1 MHz; T
amb
= 25 °C
Fig. 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig. 6.
V
RWM
= 3.3 V
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
PESD3V3S1UB
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
29 November 2018
5 / 11
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