PESD5V0S1BA
23 August 2018
Bidirectional ESD protection diode
Product data sheet
1. General description
Bidirectional ElectroStatic Discharge (ESD) protection diode in very small SOD323 (SC-76) SM
plastic package designed to protect one signal line from the damage caused by ESD and other
transients.
2. Features and benefits
•
•
•
•
•
•
•
•
•
Bidirectional ESD protection of one line
Max. peak pulse power: P
PPM
= 130 W
Low clamping voltage: V
(CL)R
= 14 V
Low leakage current: I
RM
= 5 nA
ESD protection > 30 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); I
PPM
= 12 A
Very small SMD plastic package
AEC-Q101 qualified
3. Applications
•
•
•
•
•
Cellular handsets and accessories
Portable electronics
Computers and peripherals
Communication systems
Audio and video equipment
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V
RWM
C
d
reverse standoff
voltage
diode capacitance
Conditions
T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
Min
-
-
Typ
-
35
Max
5
45
Unit
V
pF
Nexperia
PESD5V0S1BA
Bidirectional ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
2
K1
K2
cathode (diode 1)
cathode (diode 2)
SOD323
Simplified outline
1
2
Graphic symbol
K1
sym045
K2
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PESD5V0S1BA
SOD323
Description
plastic, surface-mounted package; 2 leads; 1.3 mm pitch; 1.7
mm x 1.25 mm x 0.95 mm body
Version
SOD323
7. Marking
Table 4. Marking codes
Type number
PESD5V0S1BA
Marking code
E6
PESD5V0S1BA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
23 August 2018
2 / 10
Nexperia
PESD5V0S1BA
Bidirectional ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PPM
I
PPM
T
j
T
amb
T
stg
V
ESD
rated peak pulse power
rated peak pulse current
junction temperature
ambient temperature
storage temperature
electrostatic discharge
voltage
IEC 61000-4-2 (contact discharge)
HBM MIL-Std 883
[2] [3]
t
p
= 8/20 µs
[1] [2]
[1] [2]
-
-
-
-55
-65
-
-
130
12
150
150
150
30
10
W
A
°C
°C
°C
kV
kV
Parameter
Conditions
Min
Max
Unit
ESD maximum ratings
[1]
[2]
[3]
Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC 61000-4-5
Measured from pin 1 to pin 2.
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses
120
I
pp
(%)
80
100 % I
pp
; 8 µs
mle218
001aaa191
I
pp
100 %
90 %
e
- t
50 % I
pp
; 20 µs
40
10 %
0
0
10
20
30
t (µs)
40
t
r
= 0.7 to 1 ns
30 ns
60 ns
t
Fig. 1.
8/20 µs pulse waveform according to
IEC 61000-4-5
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD5V0S1BA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
23 August 2018
3 / 10
Nexperia
PESD5V0S1BA
Bidirectional ESD protection diode
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
V
RWM
V
BR
I
RM
C
d
V
CL
r
dif
[1]
[2]
Conditions
T
amb
= 25 °C
I
R
= 1 mA; T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
I
PP
= 1 A; T
amb
= 25 °C
I
PPM
= 12 A; T
amb
= 25 °C
I
R
= 1 mA; T
amb
= 25 °C
[1] [2]
[1] [2]
Min
-
5.5
-
-
-
-
-
Typ
-
-
5
35
-
-
-
Max
5
9.5
100
45
10
14
50
Unit
V
V
nA
pF
V
V
Ω
reverse standoff
voltage
breakdown voltage
diode capacitance
clamping voltage
differential resistance
reverse leakage current V
RWM
= 5 V; T
amb
= 25 °C
Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5.
Measures from pin 1 to pin 2.
10
3
001aaa202
1.2
P
PP
001aaa193
P
PP
(W)
P
PP(25°C)
0.8
10
2
0.4
10
1
10
10
2
10
3
t
p
(µs)
10
4
0
0
50
100
150
T
j
(°C)
200
T
amb
= 25 °C
Fig. 3.
Peak pulse power as a function of exponential
pulse duration; typical values
38
C
d
(pF)
34
001aaa203
Fig. 4.
Relative variation of peak pulse power as a
function of junction temperature; typical values
10
2
001aaa204
I
RM(Tj)
I
RM(Tj=85°C)
10
30
1
26
22
0
1
2
3
4
V
R
(V)
5
10
- 1
75
100
125
T
j
(°C)
150
f = 1 MHz; T
amb
= 25 °C
Fig. 5.
Diode capacitance as a function of reverse
voltage; typcial values
Fig. 6.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
PESD5V0S1BA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
23 August 2018
4 / 10
Nexperia
PESD5V0S1BA
Bidirectional ESD protection diode
ESD TESTER
R
Z
C
Z
PESD5V0S1Bx
IEC 61000-4-2 network
C
Z
= 150 pF; R
Z
= 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
40 dB
ATTENUATOR
50 Ω
RG 223/U
50 Ω coax
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped -1 kV ESD voltage waveform
(IEC61000-4-2 network)
vertical scale = 10 V/div
horizontal scale = 50 ns/div
clamped -1 kV ESD voltage waveform
(IEC61000-4-2 network)
006aaa056
Fig. 7.
ESD clamping test setup and waveforms
PESD5V0S1BA
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
23 August 2018
5 / 10
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