PESD5Zx series
Low capacitance unidirectional ESD protection diodes
Rev. 02 — 4 April 2008
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in a
SOD523 (SC-79) ultra small and flat lead Surface-Mounted Device (SMD) plastic package
designed to protect one signal line from the damage caused by ESD and other transients.
Table 1.
Product overview
Package
NXP
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
SOD523
JEITA
SC-79
single
Configuration
Type number
1.2 Features
I
I
I
I
ESD protection of one line
Low diode capacitance
Max. peak pulse power: P
PP
= 260 W
Low clamping voltage: V
CL
= 15 V
I
I
I
I
Low leakage current: I
RM
< 1 nA
ESD protection up to 30 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 20 A
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
10/100/1000 Mbit/s Ethernet
I
Communication systems
I
Portable electronics
I
Subscriber Identity Module (SIM) card
protection
I
FireWire
I
High-speed data lines
NXP Semiconductors
PESD5Zx series
Low capacitance unidirectional ESD protection diodes
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
reverse standoff voltage
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
C
d
diode capacitance
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
f = 1 MHz; V
R
= 0 V
-
-
-
-
-
-
229
172
89
78
69
35
300
200
150
150
150
75
pF
pF
pF
pF
pF
pF
-
-
-
-
-
-
-
-
-
-
-
-
2.5
3.3
5.0
6.0
7.0
12.0
V
V
V
V
V
V
Parameter
Conditions
Min
Typ
Max
Unit
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
1
2
1
2
006aaa152
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
SC-79
Description
plastic surface-mounted package; 2 leads
Version
SOD523
Type number
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
2 of 17
NXP Semiconductors
PESD5Zx series
Low capacitance unidirectional ESD protection diodes
4. Marking
Table 5.
Marking codes
Marking code
N7
N8
N9
NA
NB
NC
Type number
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
peak pulse power
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
I
PP
peak pulse current
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
Per device
T
j
T
amb
T
stg
[1]
[2]
Parameter
Conditions
t
p
= 8/20
µs
[1][2]
Min
Max
Unit
-
-
-
-
-
-
t
p
= 8/20
µs
[1][2]
260
260
180
180
180
200
20
20
10
10
10
6
150
+150
+150
W
W
W
W
W
W
A
A
A
A
A
A
°C
°C
°C
-
-
-
-
-
-
-
−65
−65
junction temperature
ambient temperature
storage temperature
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 2.
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
3 of 17
NXP Semiconductors
PESD5Zx series
Low capacitance unidirectional ESD protection diodes
ESD maximum ratings
Parameter
electrostatic discharge voltage
PESD5Zx series
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883 (human
body model)
[1][2]
Table 7.
Symbol
Per diode
V
ESD
Conditions
Min
Max
Unit
-
-
-
30
400
10
kV
V
kV
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to 2.
Table 8.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1. 8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
4 of 17
NXP Semiconductors
PESD5Zx series
Low capacitance unidirectional ESD protection diodes
6. Characteristics
Table 9.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Per diode
V
RWM
reverse standoff voltage
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
I
RM
reverse leakage current
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
V
BR
breakdown voltage
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
C
d
diode capacitance
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
V
CL
clamping voltage
PESD5Z2.5
PESD5Z3.3
PESD5Z5.0
PESD5Z6.0
PESD5Z7.0
PESD5Z12
I
PP
= 5 A
[1][2]
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
V
RWM
= 2.5 V
V
RWM
= 3.3 V
V
RWM
= 5.0 V
V
RWM
= 6.0 V
V
RWM
= 7.0 V
V
RWM
= 12.0 V
I
R
= 1 mA
4
5
6.2
6.8
7.5
14.1
f = 1 MHz; V
R
= 0 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
8
5
2
<1
<1
-
-
-
-
-
-
229
172
89
78
69
35
8
8
12
12
14
27
2.5
3.3
5.0
6.0
7.0
12.0
6
50
50
10
10
10
-
-
-
-
-
-
300
200
150
150
150
75
9
10
13
13
15
30
V
V
V
V
V
V
µA
nA
nA
nA
nA
nA
V
V
V
V
V
V
pF
pF
pF
pF
pF
pF
V
V
V
V
V
V
PESD5ZX_SER_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 4 April 2008
5 of 17
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