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JANTXV2N4033UB

Description
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size282KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTXV2N4033UB Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3

JANTXV2N4033UB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-CDSO-N3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JESD-30 codeR-CDSO-N3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusQualified
GuidelineMIL-19500/512
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)210 ns
Maximum opening time (tons)40 ns
Base Number Matches1
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/512
DEVICES
LEVELS
2N4029
2N4033
2N4033UA
2N4033UB
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
=
+25°C
2N4029
1
2N4033
2
2N4033UA, UB
3
2N4029
2N4033
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
j
, T
stg
R
θJC
Value
80
80
5.0
1.0
0.5
0.8
0.5
-65 to +200
80
40
Unit
Vdc
Vdc
Vdc
Adc
W
°C
°C/W
TO-18 (TO-206AA)
2N4029
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Note:
1.
2.
3.
Derate linearly 2.86mW/°C for T
A
> +25°C
Derate linearly 4.56mW/°C for T
A
> +25°C
For UB package and use R
θJC
or see thermal curves in /512
TO-39 (TO-205AD)
2N4033
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Base Cutoff Current
V
CB
= 80Vdc
V
CB
= 60Vdc
V
CB
= 60Vdc, T
A
= +150°C
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
V
EB
= 3.0Vdc
Collector-Emitter Cutoff Current
V
BE
= 2.0Vdc, V
CE
= 60Vdc
I
CBO
10
10
25
10
25
25
μAdc
ηAdc
μAdc
μAdc
ηAdc
ηAdc
UA Package
I
EBO
I
CEX
UB Package
Page 1 of 6
T4-LDS-0157 Rev. 2 (101305)

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Description Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, CERAMIC PACKAGE-3 Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, TO-18, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-206AA, TO-18, 3 PIN
package instruction SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 CERAMIC PACKAGE-3 TO-18, 3 PIN TO-39, 3 PIN TO-18, 3 PIN
Reach Compliance Code _compli compli not_compliant not_compliant not_compliant unknown unknown unknown compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 80 V 80 V 80 V 80 V 80 V 80 V 80 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 25 25 25 25 25 25 25 25 25
JESD-30 code R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED METAL METAL METAL
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR ROUND ROUND ROUND
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP PNP PNP
surface mount YES YES YES YES YES YES NO NO NO
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD WIRE WIRE WIRE
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maximum off time (toff) 210 ns 210 ns 210 ns 210 ns 210 ns 210 ns 210 ns 210 ns 210 ns
Maximum opening time (tons) 40 ns 40 ns 40 ns 40 ns 40 ns 40 ns 40 ns 40 ns 40 ns
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead -
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible -
Contacts 3 3 3 3 3 3 3 2 -
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 -
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C -
Certification status Qualified Qualified Qualified Qualified Qualified Qualified Qualified Qualified -
Guideline MIL-19500/512 MIL-19500/512 MIL-19500/512 MIL-19500/512 MIL-19500/512 MIL-19500/512 MIL-19500/512 MIL-19500/512 -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD -
Objectid - - 2078571659 2078586799 2078540969 1402825125 1401534616 1401534619 -
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