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DAN601

Description
Rectifier Diode, 6 Element, 0.025A, 80V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size102KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DAN601 Overview

Rectifier Diode, 6 Element, 0.025A, 80V V(RRM), Silicon

DAN601 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionR-PSIP-T7
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationCOMMON CATHODE, 6 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JESD-30 codeR-PSIP-T7
Maximum non-repetitive peak forward current0.25 A
Number of components6
Number of terminals7
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.025 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.08 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse current0.1 µA
Maximum reverse recovery time0.004 µs
Reverse test voltage70 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

DAN601 Related Products

DAN601 DAP803 DAN403 DAN801 DAP801
Description Rectifier Diode, 6 Element, 0.025A, 80V V(RRM), Silicon Rectifier Diode, 8 Element, 0.025A, 80V V(RRM), Silicon Rectifier Diode, 4 Element, 0.1A, 80V V(RRM), Silicon Rectifier Diode, 8 Element, 0.025A, 80V V(RRM), Silicon Rectifier Diode, 8 Element, 0.025A, 80V V(RRM), Silicon
Is it Rohs certified? conform to conform to conform to conform to conform to
package instruction R-PSIP-T7 R-PSIP-T9 R-PZIP-T9 R-PSIP-T9 R-PSIP-T9
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Configuration COMMON CATHODE, 6 ELEMENTS COMMON ANODE, 8 ELEMENTS SEPARATE, 4 ELEMENTS COMMON CATHODE, 8 ELEMENTS COMMON ANODE, 8 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.9 V 0.9 V 1.2 V 0.9 V 0.9 V
JESD-30 code R-PSIP-T7 R-PSIP-T9 R-PZIP-T9 R-PSIP-T9 R-PSIP-T9
Maximum non-repetitive peak forward current 0.25 A 0.25 A 0.5 A 0.25 A 0.25 A
Number of components 6 8 4 8 8
Number of terminals 7 9 9 9 9
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 0.025 A 0.025 A 0.1 A 0.025 A 0.025 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED 225 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.08 W 0.08 W 0.2 W 0.08 W 0.08 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 80 V 80 V 80 V 80 V 80 V
Maximum reverse current 0.1 µA 0.1 µA 0.1 µA 0.1 µA 0.1 µA
Maximum reverse recovery time 0.004 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs
Reverse test voltage 70 V 70 V 70 V 70 V 70 V
surface mount NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE ZIG-ZAG SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker ROHM Semiconductor - - ROHM Semiconductor ROHM Semiconductor
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