DAP801 datasheet, PDF - EEWORLD Datasheet

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DAP801: DescriptionRectifier Diode, 8 Element, 0.025A, 80V V(RRM), Silicon; CategoryDiscrete semiconductor diode; File Size102KB，2 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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DAP801 Overview

Rectifier Diode, 8 Element, 0.025A, 80V V(RRM), Silicon

DAP801 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
package instruction	R-PSIP-T9
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Configuration	COMMON ANODE, 8 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V
JESD-30 code	R-PSIP-T9
Maximum non-repetitive peak forward current	0.25 A
Number of components	8
Number of terminals	9
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.025 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.08 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	80 V
Maximum reverse current	0.1 µA
Maximum reverse recovery time	0.004 µs
Reverse test voltage	70 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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	DAP801	DAP803	DAN403	DAN801	DAN601
Description	Rectifier Diode, 8 Element, 0.025A, 80V V(RRM), Silicon	Rectifier Diode, 8 Element, 0.025A, 80V V(RRM), Silicon	Rectifier Diode, 4 Element, 0.1A, 80V V(RRM), Silicon	Rectifier Diode, 8 Element, 0.025A, 80V V(RRM), Silicon	Rectifier Diode, 6 Element, 0.025A, 80V V(RRM), Silicon
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
package instruction	R-PSIP-T9	R-PSIP-T9	R-PZIP-T9	R-PSIP-T9	R-PSIP-T7
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Configuration	COMMON ANODE, 8 ELEMENTS	COMMON ANODE, 8 ELEMENTS	SEPARATE, 4 ELEMENTS	COMMON CATHODE, 8 ELEMENTS	COMMON CATHODE, 6 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V	0.9 V	1.2 V	0.9 V	0.9 V
JESD-30 code	R-PSIP-T9	R-PSIP-T9	R-PZIP-T9	R-PSIP-T9	R-PSIP-T7
Maximum non-repetitive peak forward current	0.25 A	0.25 A	0.5 A	0.25 A	0.25 A
Number of components	8	8	4	8	6
Number of terminals	9	9	9	9	7
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	0.025 A	0.025 A	0.1 A	0.025 A	0.025 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	225	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum power dissipation	0.08 W	0.08 W	0.2 W	0.08 W	0.08 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	80 V	80 V	80 V	80 V	80 V
Maximum reverse current	0.1 µA	0.1 µA	0.1 µA	0.1 µA	0.1 µA
Maximum reverse recovery time	0.004 µs	0.004 µs	0.004 µs	0.004 µs	0.004 µs
Reverse test voltage	70 V	70 V	70 V	70 V	70 V
surface mount	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	ZIG-ZAG	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maker	ROHM Semiconductor	-	-	ROHM Semiconductor	ROHM Semiconductor

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