UNISONIC TECHNOLOGIES CO., LTD
3N80Z
3 Amps, 800Volts
N-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC
3N80Z
provide excellent R
DS(ON)
, low gate charge
and operation with low gate voltages. This device is suitable
for use as a load switch or in PWM applications.
Preliminary
Power MOSFET
FEATURES
* R
DS(ON)
=3.2Ω @V
GS
=10 V
* Ultra Low Gate Charge ( typical 19 nC )
* Low Reverse Transfer Capacitance ( C
RSS
= Typical 11 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N80ZL-TF1-T
3N80ZG-TF1-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Note:
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-912.a
3N80Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (V
GS
=0V)
V
DSS
800
V
Drain-Gate Voltage (R
G
=20kΩ)
V
DGR
800
V
Gate-Source Voltage
V
GSS
±20
V
Gate-Source Breakdown Voltage (I
GS
=±1mA)
BV
GSO
30 (MIN)
V
Insulation Withstand Voltage (DC)
V
ISO
2500
V
Avalanche Current (Note 2)
I
AR
3
A
Continuous Drain Current
I
D
3
A
Pulsed Drain Current
I
DM
10
A
Single Pulse Avalanche Energy (Note 3)
E
AS
170
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
P
D
25
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. starting T
J
=25 °C, I
D
=I
AR
, V
DD
=50V
4. I
SD
≦2.5A,
di/dt≦200A/μs, V
DD
≦BV
DSS
, T
J
≦T
J(MAX)
.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATING
62.5
5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-912.a
3N80Z
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250μA
800
V
Drain-Source Leakage Current
I
DSS
V
DS
=800V, V
GS
=0V
1
μA
Gate-Source Leakage Current
I
GSS
V
GS
=±20V, V
DS
=0V
±10
μA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250μA
3 3.75 4.5
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=1.5A
3.2 4.2
Ω
Forward Transconductance (Note 1)
g
FS
V
DS
=15V, I
D
=1.5A
2.1
S
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
485
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Output Capacitance
C
OSS
57
pF
Reverse Transfer Capacitance
C
RSS
11
pF
SWITCHING CHARACTERISTICS
17
ns
Turn-On Delay Time
t
D(ON)
Turn-On Rise Time
t
R
27
ns
V
DD
=400V, I
D
=3 A, R
G
=4.7Ω
V
GS
=10V
Turn-Off Delay Time
t
D(OFF)
36
ns
Turn-Off Fall Time
t
F
40
ns
19
nC
Total Gate Charge
Q
G
Gate-Source Charge
Q
GS
3.2
nC
V
DD
=640V, I
D
=3A, V
GS
=10V
Gate-Drain Charge
Q
DD
10.8
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
V
SD
I
SD
=3A ,V
GS
=0V
1.6
V
Source-Drain Current
I
SD
2.5
A
Source-Drain Current (Pulsed)
I
SDM
10
A
Reverse Recovery Current
I
RRM
8.4
A
I
SD
=3A, di/dt=100A/μs,
Body Diode Reverse Recovery Time
t
rr
384
ns
V
DD
=50V, T
J
=25°C
Body Diode Reverse Recovery Charge
Q
RR
1600
nC
Notes: 1. Pulse width=300μs, Duty cycle
≤1.5%
2. C
OSS(EQ)
is defined as constant equivalent capacitance giving the same charging time as C
OSS
when V
DS
increases from 0to 80% V
DSS
.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-912.a
3N80Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-912.a
3N80Z
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-912.a
Analogue and Mixed Signal
京公网安备 11010802033920号
EEWORLD
