UNISONIC TECHNOLOGIES CO., LTD
5N70Z
5A, 700V LOGIC
N-CHANNEL MOSFET
DESCRIPTION
Power MOSFET
1
TO-220F
1
TO-220F1
The UTC
5N70Z
is an N-Channel enhancement MOSFET, it
uses UTC’s advanced technology to provide customers with a
minimum on-state resistance, high switching speed and low gate
charge. It can also withstand high energy pulse in the avalanche
and commutation modes.
The UTC
5N70Z
is suitable for high efficiency switching
DC/DC converter, motor control and switch mode power supply.
1
TO-220F2
1
TO-251
FEATURES
1
TO-252
* R
DS(ON)
<2.5Ω @ V
GS
=10V
* Low gate charge ( Typ=4.8nC)
* Low C
RSS
(Typ=6.0pF)
* High switching speed
* ESD Capability
SYMBOL
D
G
S
ORDERING INFORMATION
Package
TO-220F
TO-220F1
TO-220F2
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Ordering Number
Lead Free
Halogen Free
5N70ZL-TF3-T
5N70ZG-TF3-T
5N70ZL-TF1-T
5N70ZG-TF1-T
5N70ZL-TF2-T
5N70ZG-TF2-T
5N70ZL-TM3-T
5N70ZG-TM3-T
5N70ZL-TN3-R
5N70ZG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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5N70Z
MARKING INFORMATION
PACKAGE
TO-220F
TO-220F1
TO-220F2
TO-251
TO-252
MARKING
Power MOSFET
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5N70Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
700
V
Gate-Source Voltage
V
GSS
±20
V
Avalanche Current (Note 2)
I
AR
5
A
Continuous
I
D
5
A
Drain Current
Pulsed (Note 2)
I
DM
20
A
Single Pulsed (Note 3)
E
AS
100
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
10
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F/TO-220F1
36
W
TO-220F2
Power Dissipation
P
D
TO-251/TO-252
28
W
Junction Temperature
T
J
+150
°C
Operation Temperature
T
OPR
-55~+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=6.2mH, I
AS
=5A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C.
4. I
SD
≤4.5A,
di/dt≤300A/µs, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL CHARACTERISTICS
SYMBOL
θ
JA
RATINGS
62.5
110
θ
JC
3.47
4.53
UNIT
°C/W
°C/W
°C/W
°C/W
PARAMETER
TO-220F/TO-220F1
TO-220F2
Junction to Ambient
TO-251/TO-252
TO-220F/TO-220F1
TO-220F2
Junction to Case
TO-251/TO-252
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5N70Z
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise noted)
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Power MOSFE
MIN TYP MAX UNIT
700
0.18
1
10
+10
-10
2
2.15
420
55
9
40
42
135
48
70
20
15
4
2.5
625
65
12
60
60
155
60
90
V
V/°C
µA
µA
µA
µA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
∆BV
DSS
/∆T
J
Reference to 25°C, I
D
=250µA
I
DSS
I
GSS
V
DS
=700V, V
GS
=0V
V
DS
=560V, V
GS
=0V, T
C
=125°C
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=2.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=30V, I
D
=0.5A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=5V, V
DS
=160V, I
D
=4.5A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=5A, V
GS
=0V
Body Diode Reverse Recovery Time
t
rr
I
S
=4.5A, V
GS
=0V, dI
F
/dt=100A/µs
(Note 1)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
5
20
1.4
95
0.3
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QW-R502-911. D
5N70Z
Power MOSFE
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
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QW-R502-911. D
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