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BUX51SMDR4

Description
Power Bipolar Transistor, 3.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size10KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric View All

BUX51SMDR4 Overview

Power Bipolar Transistor, 3.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AB, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN

BUX51SMDR4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTT Electronics plc
package instructionHERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)3.5 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-276AB
JESD-30 codeR-CBCC-N3
JESD-609 codee4
Number of components1
Number of terminals3
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz

BUX51SMDR4 Preview

BUX51SMD
Dimensions in mm (inches).
0.89
(0.035)
min.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
3.60 (0.142)
Max.
4.14 (0.163)
3.84 (0.151)
Bipolar NPN Device in a
Hermetically sealed
Ceramic Surface Mount
Package for High
Reliability Applications
1
3
0.76
(0.030)
min.
16.02 (0.631)
15.73 (0.619)
Bipolar NPN Device.
V
CEO
= 200V
I
C
= 3.5A
10.69 (0.421)
10.39 (0.409)
2
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
0.50 (0.020)
0.26 (0.010)
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
SMD1 (TO276AB)
PINOUTS
1 – Base
2 – Collector
3 – Emitter
Parameter
V
CEO
*
I
C(CONT)
h
FE
f
t
P
D
Test Conditions
Min.
Typ.
Max.
200
3.5
Units
V
A
-
Hz
@ 4/1 (V
CE
/ I
C
)
20
8M
60
10
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Generated
15-Aug-02
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