SKIIP83AHB08 datasheet, PDF - EEWORLD Datasheet

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SKIIP83AHB08: DescriptionSilicon Controlled Rectifier, 800V V(RRM), 3 Element, CASE M8A, MINISKIIP-17; CategoryAnalog mixed-signal IC Trigger device; File Size361KB，7 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com

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SKIIP83AHB08 Overview

Silicon Controlled Rectifier, 800V V(RRM), 3 Element, CASE M8A, MINISKIIP-17

SKIIP83AHB08 Parametric

Parameter Name	Attribute value
Maker	SEMIKRON
package instruction	SPECIAL SHAPE, R-XXSS-X17
Contacts	17
Manufacturer packaging code	CASE M8A
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Configuration	3 PHASE BRIDGE, HALF-CONTROLLED WITH BUILT-IN IGBT
Maximum DC gate trigger current	150 mA
JESD-30 code	R-XXSS-X17
Number of components	3
Number of terminals	17
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	SPECIAL SHAPE
Certification status	Not Qualified
Repeated peak reverse voltage	800 V
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
Trigger device type	SCR

SKIIP83AHB08 Preview

SKiiP 83 AHB 08

Absolute Maximum Ratings

Symbol Conditions

Bridge Rectifier

RRM

heatsink

= 80 °C

FSM

TSM

= 10 ms; sin. 180 °C, T

= 25 °C

I²t

= 10 ms; sin. 180 °C, T

= 25 °C

IGBT Chopper

CES

GES

RRM

stg

isol

600

± 20

50 / 35

100 / 70

600

57 / 38

114 / 76

– 40 ... + 150

– 40 ... + 125

2500

°C

800

1000

5000

A²s

Values

Units

MiniSKiiP 8

SEMIKRON integrated

intelligent Power

SKiiP 83 AHB 08

half controlled

3-phase bridge rectifier +

IGBT braking chopper

Case M8a

heatsink

= 25 / 80 °C

< 1 ms; T

heatsink

= 25 / 80 °C

Freewheeling Diode

heatsink

= 25 / 80 °C

< 1 ms; T

heatsink

= 25 / 80 °C

Diode & IGBT

Thyristor

AC, 1 min.

Characteristics

Symbol Conditions

Diode - Rectifier

thjh

(TO)

thjh

dv/dt

di/dt

= 75 A

= 125 °C

per diode

= 120 A T

= 25 °C

= 125 °C

per thyristor

= 125 °C

= 25 °C

= 125 °C

–

500

–

1,15

0,8

4,5

–

250

600

–

2,1(2,2)

330

550

7,3

2,8

–

1,0

1,8

1,1

0,9

–

150

–

125

2,7(2,8)

120

160

500

830

–

1,0

Ω

K/W

Ω

K/W

V/µs

A/µs

K/W

min.

typ.

max.

Units

UL recognized file no. E63532

•

specification of temperature

Thyristor - Rectifier

sensor see part A

•

common characteristics see

page B 16 – 3

Options

•

also available with uncontrolled

rectifier (called 82 ANB 08)

•

also available with powerful

chopper, data sheet on request

•

also available with faster IGBTs

(type ... 063), data sheet on

request

IGBT - Chopper

= 50 A

= 25 (125) °C

CEsat

d(on)

= 300 V; V

= ± 15 V

= 50 A; T

= 125 °C

gon

= R

goff

= 22

Ω

d(off)

inductive load

+ E

off

ies

= 25 V; V

= 0 V, 1 MHz

thjh

per IGBT

heatsink

= 25 °C, unless otherwise

specified

CAL = Controlled Axial Lifetime

Technology (soft and fast recovery)

0698

B 16 – 45

MiniSKiiP 8

SEMIKRON integrated

intelligent Power

SKiiP 83 AHB 08

half controlled

3-phase bridge rectifier +

IGBT braking chopper

Case M8a

SKiiP 83 AHB 08

Characteristics

Symbol Conditions

Diode

- Freewheeling

= V

RRM

off

thjh

Case

= 50 A

= 25 (125) °C

= 125 °C

= 50 A; V

= – 300 V

/dt = – 800 A/µs

= 0 V, T

= 125 °C

per diode

T = 25 / 100 °C

case to heatsink, SI Units

mechanical outline see pages

B 16 – 13 and B 16 – 14

2,5

–

1,45(1,4)

0,85

5,0

1,5

–

1,7(1,7)

0,9

–

1,2

Ω

µC

K/W

min.

typ.

max.

Units

Temperature Sensor

1000 / 1670

–

M8a

3,5

Ω

Mechanical Data

B 16 – 46

0698

Fig. 1 Typ. output characteristic, t

= 80

µs;

25 °C

Fig. 2 Typ. output characteristic, t

= 80

µs;

125 °C

= 125 °C

= 300 V

= ± 15 V

= 22

Ω

= 125 °C

= 300 V

= ± 15 V

= 50 A

Fig. 3 Turn-on /-off energy = f (I

)

Cpuls

= 50 A

Fig. 4 Turn-on /-off energy = f (R

)

= 0 V

f = 1 MHz

Fig. 5 Typ. gate charge characteristic

Fig. 6 Typ. capacitances vs. V

0698

B 16 – 47

Fig. 7 Gate trigger characteristics

B 16 – 48

0698

2. Common characteristics of MiniSKiiP

MiniSKiiP 600 V

ICop / IC

1.2

Mini0607

= 150 °C

≥

15 V

1.0

0.8

0.6

0.4

0.2

100

125

150

Th [°C]

Fig. 7 Rated current of the IGBT I

Cop

/ I

= f (T

)

≤

150 °C

= ± 15 V

≤

150 °C

= ± 15 V

≤

µs

ext

< 25 nH

Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT

Fig. 10 Safe operating area at short circuit of the IGBT

Fig. 11 Typ. freewheeling diode forward characteristic

Fig. 12 Forward characteristic of the input bridge diode

0698

B 16 – 3

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