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JANSF2N5153L

Description
Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size174KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANSF2N5153L Overview

Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, TO-5, 3 PIN

JANSF2N5153L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-5
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
Certification statusQualified
GuidelineMIL-19500/545
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)70 MHz
Maximum off time (toff)1500 ns
Maximum opening time (tons)500 ns
Base Number Matches1
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
DEVICES
LEVELS
2N5151
2N5151L
2N5151U3
2N5153
2N5153L
2N5153U3
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
JANSF – 300K Rads (Si)
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
2N5151, 2N5153, L
2N5151, 2N5153, L
2N5151U3, 2N5153U3
2N5151U3, 2N5153U3
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
@ T
A
= +25°C
(3)
@ T
C
= +25°C
(4)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
80
100
5.5
2.0
1.0
10
1.16
100
-65 to +200
10
1.75 (U3)
Unit
Vdc
Vdc
Vdc
Adc
P
T
W
TO-5
2N5151L, 2N5153L
(See Figure 1)
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Case
Note:
1)
2)
3)
4)
Derate linearly 5.7mW/°C for T
A
> +25°
Derate linearly 66.7mW/°C for T
A
> +25°
Derate linearly 6.63mW/°C for T
A
> +25°
Derate linearly 571mW/°C for T
A
> +25°
T
J
, T
stg
R
θJC
°C
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 100mAdc, I
B
= 0
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc, I
C
= 0
V
EB
= 5.5Vdc, I
C
= 0
Collector-Emitter Cutoff Current
V
CE
= 60Vdc, V
BE
= 0
V
CE
= 100Vdc, V
BE
= 0
Collector-Base Cutoff Current
V
CE
= 40Vdc, I
B
= 0
V
(BR)CEO
80
Vdc
Symbol
Min.
Max.
Unit
TO-39 (TO-205AD)
2N5151, 2N5153
I
EBO
1.0
1.0
1.0
1.0
50
µAdc
mAdc
µAdc
mAdc
µAdc
U-3
2N5151U3, 2N5153U3
I
CES
I
CEO
T4-LDS-0131 Rev. 1 (091476)
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