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Datasheet> All Categories > Discrete semiconductor> The transistor> MMBT5550
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MMBT5550

Description
600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size788KB，7 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance
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MMBT5550 Overview

600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, SOT-23, 3 PIN

MMBT5550 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeSOT-23
package instructionSOT-23, 3 PIN
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage140 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusCOMMERCIAL
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz

MMBT5550 Preview

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MMBT5550 NPN General Purpose Amplifier
August 2005
MMBT5550
NPN General Purpose Amplifier
• This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.
3
2
SOT-23
1
Marking: 1F
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings *
T
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
NOTES:
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
Value
140
160
6.0
600
-55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
T
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Test Condition
I
C
= 1.0mA, I
B
= 0
I
C
= 100µA, I
E
= 0
I
E
= 10mA, I
C
= 0
V
CB
= 100V, I
E
= 0
V
CB
= 100V, I
E
= 0, T
a
= 100°C
V
EB
= 4.0V, I
C
= 0
I
C
= 1.0mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V
I
C
= 50mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Min.
140
160
6.0
Max.
Units
V
V
V
100
100
50
nA
µA
nA
On Characteristics
DC Current Gain
60
60
20
250
0.15
0.25
1.0
1.2
V
V
V
V
V
CE(sat)
V
BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MMBT5550 Rev. A
MMBT5550 NPN General Purpose Amplifier
Electrical Characteristics
Symbol
f
T
C
obo
C
ibo
T
a
= 25°C unless otherwise noted
Parameter
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Test Condition
I
C
= 10mA, V
CE
= 10V,
f = 100MHz
V
CB
= 10V, I
E
= 0, f = 1.0MHz
V
BE
= 0.5V, I
C
= 0, f = 1.0MHz
Min.
50
Max.
Units
MHz
Small Signal Characteristics
6.0
30
pF
pF
Thermal Characteristics
T =25°C unless otherwise noted
a
Symbol
P
D
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
* Device mounted on FR-4 PCB 1.6"
×
1.6"
×
0.06."
Package Marking and Ordering Information
Device Marking
1F
Device
MMBT5550
Package
SOT-23
Reel Size
7”
Tape Width
--
Quantity
3,000
2
MMBT5550 Rev. A
www.fairchildsemi.com
MMBT5550 NPN General Purpose Amplifier
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
h
FE
- TYPICAL PULSED CURRENT GAIN
250
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
0.5
200
125 C
o
0.4
β
= 10
150
0.3
25 C
o
25 C
o
100
0.2
-40 C
50
o
125 C
o
V
CE
= 5V
0.1
- 40 C
1
10
100
o
0
0.1
0.0
0.2
0.5
1
2
5
10
20
50
100
I
C
- COLLECTOR CURRENT (mA)
I
C
- COLLECTOR CURRENT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
1.0
Figure 4. Base-Emitter On Voltage
vs Collector Current
V
BEON
- BASE EMITTER ON VOLTAGE (V)
1.0
V
BESAT
- BASE EMITTER VOLTAGE (V)
β
= 10
0.8
- 40 C
o
- 40 C
o
25 C
0.6
o
0.8
125 C
0.4
o
0.6
25 C
125 C
o
o
0.4
0.2
0.2
V
CE
= 5V
1
10
100
0.0
1
10
100
200
0.0
0.1
I
C
- COLLECTOR CURRENT (mA)
I
C
- COLLECTOR CURRENT (mA)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
50
V
CB
= 100V
Figure 6. Input and Output Capacitance
vs Reverse Voltaget
30
I
CBO
- COLLE CTOR CURRENT (nA)
f = 1.0 MHz
25
CAPACITANCE (pF)
20
10
15
10
C
ib
C
cb
1
10
100
5
1
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
0
0.1
V
CE
- COLLECTOR VOLTAGE (V)
3
MMBT5550 Rev. A
www.fairchildsemi.com
MMBT5550 NPN General Purpose Amplifier
Typical Performance Characteristics
Figure 7. Power Dissipation vs
Ambient Temperature
500
(Continued)
P
D
-POWER DISSPATION (mW)
400
300
200
100
0
0
25
50
75
100
0
125
150
TEMPERATURE( C)
4
MMBT5550 Rev. A
www.fairchildsemi.com
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