EEWORLDEEWORLDEEWORLD

Part Number

Search

8ETX06STRLPBF

Description
8 A, 600 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size445KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

8ETX06STRLPBF Overview

8 A, 600 V, SILICON, RECTIFIER DIODE

8ETX06STRLPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codeunknow
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, UL RECOGNIZED
applicationHYPERFAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current110 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.024 µs
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Base Number Matches1
Bulletin PD-20766 rev. C 09/06
8ETX06
8ETX06S
8ETX06-1
8ETX06FP
Hyperfast Rectifier
Features
Hyperfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
UL E78996 approved
t
rr
= 15ns typ.
I
F(AV)
= 8Amp
V
R
= 600V
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
STG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current @ T
C
= 143°C
@ T
C
= 106°C (FULLPACK)
Non Repetitive Peak Surge Current @ T
J
= 25°C
Peak Repetitive Forward Current
Operating Junction and Storage Temperatures
110
18
- 65 to 175
°C
Max
600
8
Units
V
A
Case Styles
8ETX06
8ETX06S
8ETX06-1
8ETX06FP
Base
Cathode
2
Base
Cathode
2
2
1
1
3
3
1
3
1
3
Cathode
Anode
Cathode
Anode
N/C
Anode
N/C
Anode
TO-220AC
www.irf.com
D
2
PAK
TO-262
TO-220 FULLPACK
1

8ETX06STRLPBF Related Products

8ETX06STRLPBF 8ETX06-1TRLPBF 8ETX06-1TRRPBF 8ETX06FPTRRPBF 8ETX06STRRPBF VS-8ETX06PBF 8ETX06FPTRLPBF
Description 8 A, 600 V, SILICON, RECTIFIER DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 8 A, 600 V, SILICON, RECTIFIER DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA
LCD driving principle and design based on ARM controller.pdf
LCD driving principle and design based on ARM controller.pdf...
yuandayuan6999 MCU
Has anyone tried to generate spwm with f28335?
I have a question for you. How should I set the register of the event trigger submodule in the bridge inverter circuit? Why is the actual output three times different from the theoretical output? Does...
powered DSP and ARM Processors
Circuit Isolation Technology
Introduction to Circuit Isolation Technology...
Smithlee89 PCB Design
RF Components Test Technology Seminar for 5G - You are invited to attend!
RohdeSchwarz (hereinafter referred to as RS) sincerely invites you to participate in the "2019 RF Component Test Technology Seminar for 5G".Time and location of the meeting:October 14, Beijing October...
eric_wang Integrated technical exchanges
What suitable domestic chips are recommended?
What suitable domestic chips are recommended? 1. I have a 3.7V100mAh lithium battery. If I want to convert it into ±12V, what suitable domestic chips are recommended?2. I have a 12V100mAh lithium batt...
QWE4562009 Discrete Device
dllname defined by LIBRARY in .def and dll defined by sources???
As the title says, is there any connection between the dllname defined by LIBRARY in .def and the dll defined by sources? For example: TARGETNAME=smdk2440_PwrBtn TARGETTYPE = DYNLINK in sources and LI...
star_jia Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2612  30  2917  165  1837  53  1  59  4  37 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号