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8ETX06FPTRLPBF

Description
8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size445KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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8ETX06FPTRLPBF Overview

8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA

Bulletin PD-20766 rev. C 09/06
8ETX06
8ETX06S
8ETX06-1
8ETX06FP
Hyperfast Rectifier
Features
Hyperfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
UL E78996 approved
t
rr
= 15ns typ.
I
F(AV)
= 8Amp
V
R
= 600V
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
STG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current @ T
C
= 143°C
@ T
C
= 106°C (FULLPACK)
Non Repetitive Peak Surge Current @ T
J
= 25°C
Peak Repetitive Forward Current
Operating Junction and Storage Temperatures
110
18
- 65 to 175
°C
Max
600
8
Units
V
A
Case Styles
8ETX06
8ETX06S
8ETX06-1
8ETX06FP
Base
Cathode
2
Base
Cathode
2
2
1
1
3
3
1
3
1
3
Cathode
Anode
Cathode
Anode
N/C
Anode
N/C
Anode
TO-220AC
www.irf.com
D
2
PAK
TO-262
TO-220 FULLPACK
1

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Description 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA 8 A, 600 V, SILICON, RECTIFIER DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
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