CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. For differential input voltages greater than 0.7V, the input current must be limited to 25mA to protect the back-to-back input diodes.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
TABLE 1. DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 100kΩ, V
OUT
= 0V, Unless Otherwise Specified.
PARAMETER
Input Offset Voltage
SYMBOL
V
IO
CONDITIONS
V
CM
= 0V
GROUP A
SUBGROUPS
1
2, 3
Input Bias Current
I
B
V
CM
= 0V,
R
S
= 10kΩ, 50Ω
+I B + -I B
--------------------------
-
2
Input Offset Current
I
IO
V
CM
= 0V,
+R
S
= 10kΩ,
-R
S
= 10kΩ
V+ = +4.7V,
V- = -25.3V
V+ = 25.3V,
V- = -4.7V
V
OUT
= 0V and +10V,
R
L
= 2kΩ
V
OUT
= 0V and -10V,
R
L
= 2kΩ
∆V
CM
= +11V
∆V
CM
= +10V
-CMRR
∆V
CM
= -11V
∆V
CM
= -10V
1
2, 3
1
2, 3
1
2, 3
4
5, 6
4
5, 6
1
2, 3
1
2, 3
25
125, -55
25
125, -55
25
125, -55
25
125, -55
25
125, -55
25
125, -55
25
125, -55
-75
-135
10.3
10.3
-
-
700
300
700
300
100
100
100
100
75
135
-
-
-10.3
-10.3
-
-
-
-
-
-
-
-
nA
nA
V
V
V
V
kV/V
kV/V
kV/V
kV/V
dB
dB
dB
dB
1
2, 3
TEMP. (
o
C)
25
125, -55
25
125, -55
MIN
-100
-300
-
-
MAX
100
300
80
150
UNITS
µV
µV
nA
nA
Common Mode
Range
+CMR
-CMR
Large Signal Voltage
Gain
+A
VOL
-A
VOL
Common Mode
Rejection Ratio
+CMRR
Spec Number
2
511034-883
HA-5137/883
TABLE 1. DC ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued)
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 100kΩ, V
OUT
= 0V, Unless Otherwise Specified.
PARAMETER
Output Voltage Swing
SYMBOL
+V
OUT1
CONDITIONS
R
L
= 2kΩ
GROUP A
SUBGROUPS
4
5, 6
-V
OUT1
R
L
= 2kΩ
4
5, 6
+V
OUT2
-V
OUT2
Output Current
+I
OUT
-I
OUT
Quiescent Power
Supply Current
+I
CC
R
L
= 600Ω
R
L
= 600Ω
V
OUT
= -10V
V
OUT
= +10V
V
OUT
= 0V, I
OUT
= 0mA
4
4
4
4
1
2, 3
-I
CC
V
OUT
= 0V, I
OUT
= 0mA
1
2, 3
Power Supply
Rejection Ratio
+PSRR
∆V
SUP
= 14V,
V+ = +4V, V- = -15V,
V+ = +18V, V- = -15V
∆V
SUP
= 14V,
V+ = +15V, V- = -4V,
V+ = +15V, V- = -18V
Note 3
1
2, 3
1
2, 3
1
2, 3
-V
IO
Adj
Note 3
1
2, 3
NOTE:
3. Offset adjustment range is [V
IO
(Measured)
±1mV]
minimum referred to output. This test is for functionality only to assure adjustment
through 0V.
TABLE 2. AC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Tested at: V
SUPPLY
=
±15V,
R
SOURCE
= 50Ω, R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
VCL
= +10V/V, Unless Otherwise Specified.
PARAMETER
Slew Rate
SYMBOL
+SR
-SR
Rise and Fall Time
t
r
t
f
Overshoot
+OS
-OS
CONDITIONS
V
OUT
= -3V to +3V
V
OUT
= +3V to -3V
V
OUT
= 0 to +200mV
10%
≤
t
r
≤
90%
V
OUT
= 0 to -200mV
10%
≤
t
f
≤
90%
V
OUT
= 0 to +200mV
V
OUT
= 0 to -200mV
GROUP A
SUBGROUPS
7
7
7
7
7
7
TEMP. (
o
C)
25
25
25
25
25
25
MIN
14
14
-
-
-
-
MAX
-
-
100
100
40
40
UNITS
V/µs
V/µs
ns
ns
%
%
TEMP. (
o
C)
25
125, -55
25
125, -55
25
25
25
25
25
125, -55
25
125, -55
25
125, -55
25
125, -55
25
125, -55
25
125, -55
MIN
11.5
11.5
-
-
10
-
16.5
-
-
-
-4
-4
86
86
86
86
V
IO
-1
V
IO
-1
V
IO
+1
V
IO
+1
MAX
-
-
-11.5
-11.5
-
-10
-
-16.5
4
4
-
-
-
-
-
-
-
-
-
-
UNITS
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
dB
dB
dB
dB
mV
mV
mV
mV
-PSRR
Offset Voltage
Adjustment
+V
IO
Adj
Spec Number
3
511034-883
HA-5137/883
TABLE 3. ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Characterized at: V
SUPPLY
=
±15V,
R
LOAD
= 2kΩ, C
LOAD
= 50pF, A
V
= +5V/V, Unless Otherwise Specified.
PARAMETER
Average Offset Voltage
Drift
Differential Input
Resistance
Low Frequency
Peak-to-Peak Noise
Input Noise Voltage
Density
SYMBOL
V
IO
TC
R
IN
E
NP-P
E
N
CONDITIONS
V
CM
= 0V
V
CM
= 0V
0.1Hz to 10Hz
R
S
= 20Ω, f
O
= 10Hz
R
S
= 20Ω, f
O
= 100Hz
R
S
= 20Ω, f
O
= 1kHz
Input Noise Current
Density
I
N
R
S
= 2MΩ, f
O
= 10Hz
R
S
= 2MΩ, f
O
= 100Hz
R
S
= 2MΩ, f
O
= 1kHz
Gain Bandwidth Product
GBWP
V
O
= 100mV, f
O
=
10kHz
V
O
= 100mV, f
O
=
1MHz
Full Power Bandwidth
Minimum Closed Loop
Stable Gain
Settling Time
Output Resistance
Quiescent Power
Consumption
NOTES:
4. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-
eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization
based upon data from multiple production runs which reflect lot to lot and within lot variation.
5. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πV
PEAK
).
6. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on output.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
Group A Test Requirements
Groups C and D Endpoints
NOTE:
7. PDA applies to Subgroup 1 only.
SUBGROUPS (SEE TABLES 1 AND 2)
1
1 (Note 7), 2, 3, 4, 5, 6, 7
1, 2, 3, 4, 5, 6, 7
1
FPBW
CLSG
t
S
R
OUT
PC
V
PEAK
= 10V
R
L
= 2kΩ, C
L
= 50pF
To 0.1% for a 10V Step
Open Loop
V
OUT
= 0V, I
OUT
= 0mA
NOTES
4
4
4
4
4
4
4
4
4
4
4
4, 5
4
4
4
4, 6
TEMP. (
o
C)
-55 to 125
25
25
25
25
25
25
25
25
25
25
25
-55 to 125
25
25
-55 to 125
MIN
-
0.8
-
-
-
-
-
-
-
60
43
220
±5
-
-
-
MAX
1.8
-
0.25
10
5.6
4.5
4.0
2.3
0.6
-
-
-
-
1.5
100
120
UNITS
µV/
o
C
MΩ
µV
P-P
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
pA/√Hz
pA/√Hz
MHz
MHz
kHz
V/V
µs
Ω
mW
Spec Number
4
511034-883
HA-5137/883
Die Characteristics
DIE DIMENSIONS:
104.3 x 65 x 19 mils
2650 x 1650 x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
Å
±
2k
Å
GLASSIVATION:
Type: Nitride (Si
3
N
4
) over Silox (SiO
2
, 5% Phos.)
Silox Thickness: 12kÅ
±
2kÅ
Nitride Thickness: 3.5kÅ
±
1.5kÅ
TRANSISTOR COUNT:
63
PROCESS:
Bipolar Dielectric Isolation
WORST CASE CURRENT DENSITY:
3.6 x 10
5
A/cm
2
at 15mA
This device meets Glassivation Integrity Test Requirement
per MIL-STD-883 Method 2021 and MIL-I-38535 Paragraph
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