ISP815X,ISP825X,ISP845X3,2,1
ISP815,ISP825,ISP845-3,-2,-1
LOW INPUT CURRENT
PHOTODARLINGTON OPTICALLY
COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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ISP815X3,2,1
ISP815-3,2,1
2.54
7.0
6.0
Dimensions in mm
1
2
4
3
VDE 0884 in 3 available lead form : -
- STD
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- G form
-
SMD approved to CECC 00802
Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P01102465
Fimko - Certificate No. FI18162
Semko - Reference No. 0202041/01-25
Demko - Certificate No. 311161-01
BSI approved - Certificate No. 8001
1.2
5.08
4.08
7.62
4.0
3.0
0.5
3.0
0.26
3.35
13°
Max
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DESCRIPTION
The ISP815-3,-2,-1, ISP825-3,-2,-1, ISP845-3,-2,-1
series of optically coupled isolators consist of
infrared light emitting diodes and NPN silicon
photodarlingtons in space efficient dual in line
plastic packages.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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Low input current 0.25mA I
F
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High CurrentTransfer Ratio (200% min)
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High Isolation Voltage (5.3kV
RMS
)
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High BV
CEO
(70V min)
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
ISP825X3,2,1
0.5
ISP825-3,2,1
2.54
7.0
6.0
1.2
10.16
9.16
1
2
3
4
7.62
8
7
6
5
4.0
3.0
0.5
13°
Max
0.26
1
2
3
4
5
7.0
6.0
6
7
8
16
15
14
13
12
11
10
9
7.62
13°
Max
0.26
3.0
3.35
0.5
ISP845X3,2,1
ISP845-3,2,1
2.54
7.62
1.2
20.32
19.32
4.0
3.0
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
3.0
0.5 3.35
0.5
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
31/3/03
DB92442m-AAS/A6
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Current (I
R
)
Output
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
70V
6V
150mW
MIN TYP MAX UNITS
1.2
1.4
10
70
6
100
V
µ
A
TEST CONDITION
I
F
= 20mA
V
R
= 4V
I
C
= 1mA
I
E
= 100
µ
A
V
CE
= 20V
0.25mA I
F
, 1.0V V
CE
0.5mA I
F
, 1.0V V
CE
1.0mA I
F
, 1.0V V
CE
.
0.5mA I
F
, 1.0V V
CE
1.0mA I
F
, 1.0V V
CE
1.0mA I
F
, 1.0V V
CE
0.25mA I
F
, 0.5mA I
C
0.5mA I
F
, 2mA I
C
1.0mA I
F
, 8mA I
C
See note 1
V
IO
= 500V (note 1)
V
CE
= 2V ,
I
C
= 10mA,R
L
= 100
Ω
V
V
nA
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Coupled
Current Transfer Ratio (CTR) (Note 2
)
ISP815-3, ISP825-3, ISP845-3
200
400
800
400
800
800
1.0
1.0
1.0
%
%
%
%
%
%
V
V
V
V
RMS
Ω
µ
s
µ
s
ISP815-2, ISP825-2, ISP845-2
ISP815-1, ISP825-1, ISP845-1
Collector-emitter Saturation Voltage -3
-2
-1
Input to Output Isolation Voltage V
ISO
5300
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time tr
Output Fall Time
tf
60
53
300
250
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
31/3/03
DB92442m-AAS/A6
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
10
150
Collector current I
C
(mA)
8
6
4
2
0
-30
0
25
50
75
100
125
0
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
Relative current transfer ratio
50
Forward current I
F
(mA)
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
31/3/03
Collector Current vs.
Collector-emitter Voltage
I
F
= 1.0mA
T
A
= 25°C
100
I
F
= 0.5mA
50
I
F
= 0.25mA
0
1
2
3
4
5
Collector-emitter voltage V
CE
( V )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
I
F
= 1mA
V
CE
= 1V
1.0
0.5
0
-30
0
25
50
75
Ambient temperature T
A
( °C )
100
Current Transfer Ratio vs. Forward Current
1200
Collector-emitter saturation voltage V
CE(SAT)
(V)
I
F
= 1mA
I
C
= 8mA
Current transfer ratio CTR (%)
1000
800
600
400
200
0
0.1
0.2
0.5
1
2
Forward current I
F
(mA)
5
V
CE
= 1V
T
A
= 25 °C
DB92442m-AAS/A6
PCB Design
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